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For imd Found Datasheets File :: 3364 Search Time::1.64ms
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				Freescale Semiconductor, Inc Freescale Semiconductor...
Part No.	MRF8S8260H MRF8S8260HR3
OCR Text	...on point, cw p1db ? 260 (1) ? w imd symmetry @ 80 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 9.7 ? mhz vbw resonance point (imd thir...
Description	RF Power Field Effect Transistors
File Size	445.24K / 14 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc Freescale Semiconductor...
Part No.	MRF7S21170HR312 MRF7S21170HSR3
OCR Text	...termodulation d istortion (dbc) imd, third order 400 i dq = 2100 ma 1750 ma 700 ma 1050 ma 1400 ma i dq = 700 ma 1750 ma 1050 ma 1400 ma 2100 ma v dd =28vdc,p out =84w(avg.),i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth...
Description	RF Power Field Effect Transistors
File Size	446.78K / 17 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF374A MRF374A06
OCR Text	...gain ? 17.3 db efficiency ? 41% imd ? - 32.5 dbc ? capable of handling 10:1 vswr @ 32 vdc, 857 mhz, 130 watts cw output power features ? integrated esd protection ? excellent thermal stability ? characterized with differential large - sig...
Description	RF Power Field Effect Transistors
File Size	365.99K / 12 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF372R3 MRF372R5
OCR Text	...r gain ? 17 db efficiency ? 36% imd ? - 35 dbc ? typical broadband two - tone performance @ f1 = 857 mhz, f2 = 863 mhz, 32 volts output power ? 180 watts pep power gain ? 14.5 db efficiency ? 37% imd ? - 31 dbc ? capable of handling 3:1 ...
Description	RF Power Field-Effect Transistor
File Size	504.72K / 16 Page	View it Online	Download Datasheet

				飞思卡尔半导体(中国)有限公司
Part No.	MRF6S20010GNR1
OCR Text	...5.5 db drain efficiency ? 36% imd ? - 34 dbc ? typical 2 - carrier w - cdma performance: v dd = 28 volts, i dq = 130 ma, p out = 1 watt avg., full frequency band (2130 - 2170 mhz), channel bandwidth = 3.84 mhz. par = 8.5 db @ 0.01% p...
Description	RF Power Field Effect Transistors 射频功率场效应晶体管
File Size	584.19K / 24 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc Freescale Semiconductor...
Part No.	RC1206FR--108R2L B41694A5477Q7 C5750X7S2A106M AFT21S230S232S RC1206FR-108R2L ATC100B0R3BT500XT ATC100B0R6BT500XT ATC100B6R8BT500XT CDR34BX104AKWS
OCR Text	...--19.3 ? ? vbw resonance point (imd third order intermodulation inflection point) aft21s230s aft21s232s vbw res ? 95 60 ? mhz gain flatness in 60 mhz bandwidth @ p out =50wavg. g f ? 0.5 ? db gain variation over temperature (--30 ? cto+85 ?...
Description	RF Power LDMOS Transistors
File Size	432.54K / 15 Page	View it Online	Download Datasheet

				Sumitomo Electric Industries, Ltd.
Part No.	FLL21E135IX
OCR Text	...high power gaas fet two-carrier imd(aclr) vs. output power v ds =28v, i ds =1000ma, fo=2.1325, f1=2.1475ghz w-cdma 3-gpp bs-1 64ch modulation single-carrier aclr vs. output power v ds =28v, i ds =1000ma, fo=2.1325ghz w-cdma 3gpp bs-1 64ch m...
Description	L,S-band High Power GaAs FET 升，S波段高功率GaAs场效应管
File Size	287.42K / 7 Page	View it Online	Download Datasheet

				Sumitomo Electric Industries, Ltd.
Part No.	FLL21E090IY
OCR Text	...high power gaas fet two-carrier imd(aclr) vs. output power v ds =28v i ds =750ma fo=2.1325, f1=2.1475ghz w-cdma 3-gpp bs-1 64ch modulation single-carrier aclr vs. output power v ds =28v i ds =750ma fo=2.1325ghz w-cdma 3gpp bs-1 64ch modulat...
Description	L,S-band High Power GaAs FET 升，S波段高功率GaAs场效应管
File Size	286.41K / 7 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	RF--35 CRCW120610KOJNEA CRCW120610ROJNEA ATC100B0R7BT500XT MRF6VP3091N ATC100B9R1CT500XT ATC100B3R0CT500XT ATC100B7R5CT500XT GRM55DR61H106KA88L T491X226K035AT ATC100B6R2BT500XT
OCR Text	...) d (%) output signal par (db) imd shoulder (dbc) dvb--t (8k ofdm) 18 avg. 470 21.8 31.0 7.9 --27.8 650 21.6 26.4 8.4 --37.6 860 21.7 27.6 7.1 --30.4 features ? capable of handling 10:1 vswr, all phase angles, @ 50 vdc, 860 mhz, 90 watts c...
Description	RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
File Size	1,097.27K / 20 Page	View it Online	Download Datasheet

For imd Found Datasheets File :: 3364 Search Time::1.64ms
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