ldmos rf power field effect tr pdf Datasheet P6 Description --- IC-ON-LINE

ldmos rf power field effect tr Datasheet PDF File

For ldmos rf power field effect tr Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	rfH35N10 rfH35N08
Description	power MOS field - effect trANSISTORS N - CHANNEL ENHANCEMENT - MODE power field - effect trANSISTORS
File Size	141.70K / 3 Page	View it Online	Download Datasheet

				FREESCALE NEC STMICROELECtrONICS[STMicroelectronics]
Part No.	MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 Mrf6S9045N Mrf6S9045NBR1 Mrf6S9045NR1 Mrf9200LR306 Mrf9200LSR3 MW5IC2030MBR106 MW5IC2030NBR1065 MW6IC2015GNBR1 MW6IC2015NBR1 NE76184A-TI MJE3055T MJE2955T
Description	COMPLEMENTARY SILICON power trANSISTORS COMPLEMETARY SILICON power trANSISTORS SILICON NPN trANSISTOR HIGH VOLTAGE PNP power trANSISTOR SILICON NPN power DARLINGTON trANSISTOR rf power field effect transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs rf ldmos Wideband Integrated power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, power trANSISTOR, TO-220AB
File Size	57.87K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors Quanzhou Jinmei Electro...
Part No.	BLF872 BLF872-2015
Description	UHF power ldmos transistor UHF power ldmos transistor - Description: UHF ldmos power transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; power gain: 16.5 dB
File Size	144.79K / 16 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
Part No.	NDP6020P NDB6020P
Description	P-Channel Enhancement Mode field effect transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, power, MOSFET, TO-263AB P-Channel Logic Level Enhancement Mode field effect transistor
File Size	60.89K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semiconductor
Part No.	Irf540_D ON0285 Irf540/D Irf540-D Irf540
Description	27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, power, MOSFET, TO-220AB 100V7A TMOS power field effect transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）) From old datasheet system TMOS power FET 27 AMPERES TMOS E-FET power field effect transistor N-Channel Enhancement-Mode Silicon Gate
File Size	139.23K / 6 Page	View it Online	Download Datasheet

				GE Solid State
Part No.	rfP10P12 rfM10P15
Description	(rfP10P12 / rfP10P15) P-CHANNEL ENHANCEMENT - MODE power field-effect trANSISTORS (rfM10P12 / rfM10P15) P-CHANNEL ENHANCEMENT - MODE power field-effect trANSISTORS
File Size	270.80K / 4 Page	View it Online	Download Datasheet

				General Electric Solid State GE Solid State
Part No.	IrfF120 IrfF121 IrfF122 IrfF123
Description	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE power MOS field-effect trANSISTORS
File Size	161.85K / 5 Page	View it Online	Download Datasheet

				General Electric Solid State GE Solid State
Part No.	IrfF110 IrfF111 IrfF112 IrfF113
Description	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. power MOS field-effect transistors N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
File Size	173.01K / 5 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semiconductor
Part No.	Irf530_D ON0283 Irf530-D Irf530/D
Description	100V4A TMOS power field effect transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）) TMOS power FET 14 AMPERES From old datasheet system TMOS E-FET power field effect transistor N-Channel Enhancement-Mode Silicon Gate
File Size	162.84K / 8 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	SSM3J02T
Description	TOSHIBA field effect transistor Silicon P Channel MOS Type field effect transistor Silicon P Channel MOS Type power Management Switch High Speed Switching Applications
File Size	135.95K / 5 Page	View it Online	Download Datasheet

For ldmos rf power field effect tr Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |