|
|
 |
PANJIT[Pan Jit International Inc.] PanJit International Inc.
|
Part No. |
GBL400 GBL404 GBL402 GBL401 GBL406 GBL408
|
Description |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). IN-LINE MINIATUre SINGLE PHASE SILICON BRIDGE reCTIFIER(VOLTAGE - 50 to 800 Volts CURreNT - 4.0 Amperes) Aluminum Polymer SMT Capacitor; capacitance: 1000uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & reel
|
File Size |
52.63K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |
|
Part No. |
BD180-6
|
Description |
Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:DO-214AA; reel Quantity:2500; repetitive reverse Voltage Max, Vrrm:65V; capacitance:60pF; forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA
|
File Size |
173.10K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Siemens Semiconductor G...
|
Part No. |
Q62702-A1025
|
Description |
Silicon PIN Diode (PIN diode for high speed switching of RF signals low forward resistance Very low capacitance For frequencies up to 3 GHz)
|
File Size |
52.87K /
4 Page |
View
it Online |
Download Datasheet
|
|
|
 |
|
Part No. |
MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP MV1406-4MCHIP MV1404A-7M MV1404-2M MV1405A-2M
|
Description |
360 pF, 12 V, SILICON, VARIABLE capacitance DIODE 550 pF, 12 V, SILICON, VARIABLE capacitance DIODE, DO-14 250 pF, 12 V, SILICON, VARIABLE capacitance DIODE, DO-7 175 pF, 12 V, SILICON, VARIABLE capacitance DIODE 100 pF, 12 V, SILICON, VARIABLE capacitance DIODE 120 pF, 12 V, SILICON, VARIABLE capacitance DIODE, DO-7
|
File Size |
67.26K /
1 Page |
View
it Online |
Download Datasheet
|
|
|
 |
NEC, Corp. NEC[NEC]
|
Part No. |
2SJ626 2SJ626-T1B 2SJ626-T2B
|
Description |
Small Signal Diode; repetitive reverse Voltage Max, Vrrm:30V; forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; forward Current Max, If:150mA; forward Voltage:1.0V MOS场效应管 MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
File Size |
63.69K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
|
Part No. |
STH75N06FI STW75N06
|
Description |
Transient Surge Protection Thyristor; Package/Case:TO-92; Current, It av:2.2A; Leaded Process Compatible:No; Peak reflow Compatible (260 C):No; capacitance:30pF; Current Rating:2.2A; forward Voltage:190V; Holding Current:150mA TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | TO-247 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 75A条(丁)|47
|
File Size |
399.10K /
10 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|