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| Part No. |
M5M51008BKV-10LL-I
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| OCR Text |
...ry result in a high density and low power static ram. they are low standby current and low operation current and ideal for the battery back-up application. the m5m51008bvp,rv,kv,kr are packaged in a 32-pin thin small outline package whi... |
| Description |
128K X 8 STANDARD SRAM, 100 ns, PDSO32
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| File Size |
61.46K /
7 Page |
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Linear Technology, Corp.
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| Part No. |
LTC5551
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...ry high iip3 and p1db with low power consumption. a typical application is a basestation receiver covering 700 mhz to 2.7ghz frequency range. the rf input can be matched for a wide range of frequencies and the ... |
| Description |
300MHz to 3.5GHz Ultra-High Dynamic Range Downconverting Mixer
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| File Size |
430.75K /
24 Page |
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NXP Semiconductors N.V.
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| Part No. |
LPC1820FET100
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...rs system enhancements such as low power consumption, enhanced debug features, and a high level of support block integration. the lpc1850/30/20/10 operate at cpu fr equencies of up to 180 mhz. the arm cortex-m3 cpu incorporates a 3-stage... |
| Description |
32-bit ARM Cortex-M3 MCU??kB flash, 168kB SRAM, TFBGA100 package
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| File Size |
2,596.23K /
144 Page |
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AVX
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| Part No. |
LCWC0402
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| OCR Text |
...76) (0.040) (0.070) mm (inches) low profile type size a b c d efgh i j (inch) max. max. max. ref. 0805 0805 2.29 1.73 1.03 0.51 1.27 0.44 1.02 1.78 1.02 0.76 (0.090) (0.068) (0.041) (0.020) (0.050) (0.017) (0.040) (0.070) (0.040) (0.030) 10... |
| Description |
Wire Wound Chip Inductor
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| File Size |
329.69K /
10 Page |
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it Online |
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| Part No. |
KM68FU8100RI-7
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low power and low voltage full cmos static ram revision history revision no. 0.0 remark preliminary history initial draft draft date august 25, 1999 the attached datasheets are provided by samsung electronics. samsung electronics co., lt... |
| Description |
1M X 8 STANDARD SRAM, 70 ns, PDSO44
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| File Size |
200.59K /
10 Page |
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it Online |
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| Part No. |
K4S161622D-TC55
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...oing edge of the clk with ras low. enables row access & precharge. cas column address strobe latches column addresses on the positive going edge of the clk with cas low. enables column access. we write enable enables write operation and... |
| Description |
1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50
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| File Size |
1,135.05K /
43 Page |
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| Part No. |
IRLU9343-701
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...rocessing techniques to achieve low on-resistance per silicon area. furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-d audio amplifier performance factors such as efficien... |
| Description |
20 A, 55 V, 0.105 ohm, P-CHANNEL, Si, POWER, MOSFET
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| File Size |
248.72K /
11 Page |
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Integrated Device Technology, Inc.
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IDTQS742374TSO
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...i 3-state output enable (active low) function table (1) inputs internal outputs oe cp dx value qx ox function h l x ? z disable outputs h h x ? z disable outputs l l l l load input data l h h h enable outputs h l l z load input data h ... |
| Description |
HIGH-SPEED CMOS BUS INTERFACE 8-BIT REGISTER
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| File Size |
51.03K /
6 Page |
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INTEGRATED DEVICE TECHNOLOGY INC
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IDT70V35S25PFGI
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...trial: 20/25ns (max.) low-power operation ? idt70v35s active: 430mw (typ.) standby: 3.3mw (typ.) ? idt70v35l active: 415mw (typ.) standby: 660 w (typ.) separate upper-byte and lower-byte control for multiplexed bus comp... |
| Description |
8K X 18 DUAL-PORT SRAM, 25 ns, PQFP100
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| File Size |
152.96K /
17 Page |
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it Online |
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