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For mes Found Datasheets File :: 551    Search Time::1.797ms    
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    NE6500496

NEC
Part No. NE6500496
OCR Text mes FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs mes FET DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device...
Description 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs mes FET

File Size 28.37K  /  6 Page

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    HuaXinAn Electronics CO.,LTD
HuaXinAn Electronics CO.,LT...
Part No. 3R90DF 3R-230 3R-250 3R150DF
OCR Text ...charge current ( 50hz,1s, 10 ti mes ) capacitan ce (1mhz) v v v g 10 t imes 1 time a pf 3r-75 75 2 0 % < 500 < 600 > 1 20ka 25ka 20 1 3r-90 90 2 0 % < 500 < 600 > 1 20ka 25ka 20 1 3r-150 150 2 0 % < 500 < 600 > 1 20ka 25ka 20 1 3r-23...
Description 3-Electrode Gas Discharge Tubes

File Size 172.30K  /  2 Page

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    3SK299

Hitachi Semiconductor
NEC
Part No. 3SK299
OCR Text mes FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE mes FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES * Suitable for use as RF amplifier in UHF TV tuner. * Low Crss : 0.02 pF TYP. * High GPS...
Description RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE mes FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD

File Size 52.54K  /  6 Page

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    NE6501077

NEC[NEC]
ETC
Part No. NE6501077
OCR Text mes FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs mes FET DESCRIPTION The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the devic...
Description 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs mes FET
10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs mes FET
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs mes FET

File Size 36.45K  /  6 Page

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    NEC Corp.
NEC[NEC]
Part No. NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500200 NE8500200-RG NE8500200-WB NE8500200-WB-A
OCR Text mes FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs mes FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged devi...
Description 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs mes FET
C BAND, GaAs, N-CHANNEL, RF POWER, mesFET

File Size 47.52K  /  8 Page

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    NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4450-4D NEZ4450-4DD NEZ4450-8D NEZ4450-8DD NEZ3642-4D NEZ3642-8D NEZ364

NEC, Corp.
NEC Corp.
NEC[NEC]
http://
Part No. NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4450-4D NEZ4450-4DD NEZ4450-8D NEZ4450-8DD NEZ3642-4D NEZ3642-8D NEZ3642-8DD NEZ6472-8DD NEZ6472-4DD NEZ6472-4D NEZ7177-4D NEZ7177-8DD NEZ5964-4D NEZ5964-4DD NEZ5964-8D NEZ5964-8DD NEZ6472-8D NEZ7177-4DD NEZ7177-8D
OCR Text mes FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs mes FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave...
Description    4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs mes FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs mes FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes

File Size 106.86K  /  18 Page

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    NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D NEZ3642-15DD NEZ6472-15D NEZ5964-15D NEZ5964-15DD NEZ6472-15DD

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D NEZ3642-15DD NEZ6472-15D NEZ5964-15D NEZ5964-15DD NEZ6472-15DD
OCR Text mes FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs mes FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave a...
Description 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs mes FET

File Size 67.49K  /  12 Page

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    HuaXinAn Electronics CO.,LTD
HuaXinAn Electronics CO...
Part No. 2R350B 2R4000B 2R400B 2R2500B 2R250B 2R800B 2R1000B 2R2000B 2R500B 2R300B 2R470B 2R150B 2R3000B 2R1500B 2R600B 2R230B
OCR Text ...charge current ( 50hz,1s, 10 ti mes ) capacitan ce (1mhz) v v v g 10 t imes 1 time a pf 2r75b 75 2 0 % < 500 < 600 > 1 5 ka 10 ka 5 1 2r90b 90 2 0 % < 500 < 600 > 1 5 ka 10 ka 5 1 2r150b 150 2 0 % < 500 < 600 > 1 5ka 10 ka 5 1 2r230b...
Description 2-Electrode Gas Discharge Tubes

File Size 136.81K  /  2 Page

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    NEC[NEC]
Part No. NE71300-N NE71300-M NE71300-L NE713 NE71383B
OCR Text mes FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs mes FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm...
Description L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs mes FET

File Size 87.85K  /  16 Page

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    HuaXinAn Electronics CO.,LTD
HuaXinAn Electronics CO...
Part No. 2R350C 2R4000C 2R2500C 2R250C 2R800C 2R1000C 2R2000C 2R500C 2R400C 2R470C 2R1500C 2R3000C 2R600C 2R150C 2R230C 2R90C
OCR Text ...charge current ( 50hz,1s, 10 ti mes ) capacitan ce (1mhz) v v v g 10 t imes 1 time a pf 2r75c 75 2 0 % < 500 < 600 > 1 5 ka 10 ka 5 1 2r90c 90 2 0 % < 500 < 600 > 1 5 ka 10 ka 5 1 2r150c 150 2 0 % < 500 < 600 > 1 5ka 10 ka 5 1 2r230c...
Description 2-Electrode Gas Discharge Tubes

File Size 140.51K  /  2 Page

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For mes Found Datasheets File :: 551    Search Time::1.797ms    
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