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mocvd Datasheet PDF File

For mocvd Found Datasheets File :: 117 Search Time::1.078ms
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				MICROSEMI[Microsemi Corporation]
Part No.	MWS11GB11-S1 MWS11 MWS11GB11-G1
OCR Text	...polar Transistor (HBT) process (mocvd). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output impedance. Applications include IF and RF amplification in wireles...
Description	InGaP HBT Gain Block
File Size	76.46K / 6 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
Part No.	QAL-785-04-F-18-3 QAL-785-04-F-18 QAL-785-04-F-18-1 QAL-785-04-F-18-2
OCR Text	mocvd grown 780nm band AIGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for industrial optical module and sensor applications. [ FEATURES ] - Visible Light Output ...
Description	AIGaAs Laser Diode AIGaAs激光二极管 From old datasheet system
File Size	185.46K / 1 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC N.A.
Part No.	QL65D5SA
OCR Text	mocvd grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Pointer and Bar Code Reader. APPLICATION Optical Leve...
Description	InGaAlP Laser Diode
File Size	28.01K / 3 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC
Part No.	SZP-3026Z
OCR Text	... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 equipment in the 2.7-3.8GHz bands. It can run from a 3V to...
Description	2.7-3.8GHz 2W InGaP Amplifier
File Size	404.91K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	FU-427SLD-F1
OCR Text	...H** structure fabricated by all mocvd process Multiple quantum well *Facet selective-growth buried heterostructure APPLICATION Trunk Line,FitL ABSOLUTE MAXIMUM RATINGS Parameter Laser diode (Tc=25 C) Symbol Conditions CW Rating 3 Un...
Description	1.3 um LD MODULE WITH SINGLEMODE FIBER PIGTAIL
File Size	44.33K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	FU-427SLD-F1M54
OCR Text	...H** structure fabricated by all mocvd process Multiple quantum well *Facet selective-growth buried heterostructure APPLICATION OTDR ABSOLUTE MAXIMUM RATINGS (Tc=25 C) Parameter Symbol Laser diode Reverse voltage Vrl Forward current Pho...
Description	1.3 um LD MODULE WITH SINGLEMODE FIBER PIGTAIL
File Size	46.33K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FU-427SHL-8M22
OCR Text	...H** structure fabricated by all mocvd process Multiple quantum well *Facet selective-growth buried heterostructure APPLICATION OTDR ABSOLUTE MAXIMUM RATINGS Parameter Laser diode Reverse voltage Forword current Operating case temperatu...
Description	1.3 um LD MODULE WITH SINGLEMODE FIBER PIGTAIL
File Size	36.84K / 3 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	SZA-3044Z SZA-3044
OCR Text	... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3-3.8 GHz bands. It can run from a 3V to 6V supp...
Description	2.7-3.8GHz 5V 1W Power Amplifier
File Size	391.92K / 8 Page	View it Online	Download Datasheet

				SIRENZA[SIRENZA MICRODEVICES]
Part No.	SZP-2026Z
OCR Text	... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 and 802.11 equipment in the 2.22.7GHz bands. It can run fr...
Description	2.2-2.7GHz 2W InGaP Amplifier
File Size	554.59K / 12 Page	View it Online	Download Datasheet

				SIRENZA[SIRENZA MICRODEVICES]
Part No.	SZP-3026Z
OCR Text	... technology and fabricated with mocvd for an ideal combination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 equipment in the 3.0-3.8GHz bands. It can run from a 3V to...
Description	3.0-3.8GHz 2W InGaP Amplifier
File Size	374.87K / 10 Page	View it Online	Download Datasheet

For mocvd Found Datasheets File :: 117 Search Time::1.078ms
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