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  mosfet igbt Datasheet PDF File

For mosfet igbt Found Datasheets File :: 2096    Search Time::3.485ms    
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    HGTP10N40F1D HGTP10N50F1D

INTERSIL[Intersil Corporation]
Part No. HGTP10N40F1D HGTP10N50F1D
OCR Text ...s the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop va...igbt is an ultrafast (tRR < 60ns) with soft recovery characteristic. igbts are ideal for many high v...
Description 10A 400V and 500V N-Channel igbts with Anti-Parallel Ultrafast Diodes
10A, 400V and 500V N-Channel igbts with Anti-Parallel Ultrafast Diodes
10A/ 400V and 500V N-Channel igbts with Anti-Parallel Ultrafast Diodes

File Size 33.70K  /  5 Page

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    HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL
OCR Text ...e the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The igbt used is the development type TA49335. The dio...
Description    600V, SMPS Series N-Channel igbt with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel igbt with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL igbt, TO-247
600V/ SMPS Series N-Channel igbt with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk

File Size 170.23K  /  8 Page

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    HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL
OCR Text ...e the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This igbt is ideal for many high voltage switching appl...
Description 600V SMPS Series N-Channel igbt
600V, SMPS Series N-Channel igbts 54 A, 600 V, N-CHANNEL igbt, TO-247
600V/ SMPS Series N-Channel igbts
600 V, SMPS N-Channel igbt

File Size 180.89K  /  8 Page

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    HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A

Fairchild Semiconductor
Part No. HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
OCR Text ...e the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The igbt used is the development type TA49171. The diod...
Description 27A, 600V, UFS Series N-Channel igbts with Anti-Parallel Hyperfast Diode
27A/ 600V/ UFS Series N-Channel igbts with Anti-Parallel Hyperfast Diode
TRANSISTOR | igbt | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

File Size 202.82K  /  7 Page

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    HGTP12N60B3 HGT1S12N60B3S FN4410

INTERSIL[Intersil Corporation]
Part No. HGTP12N60B3 HGT1S12N60B3S FN4410
OCR Text ...e the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The igbt is ideal for many high voltage switching appli...
Description From old datasheet system
27A, 600V, UFS Series N-Channel igbts
27A/ 600V/ UFS Series N-Channel igbts

File Size 111.87K  /  7 Page

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    HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL
OCR Text ...s the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The igbt used is the development type TA49123. The diod...
Description 24A, 600V, UFS Series N-Channel igbt with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL igbt, TO-220AB
24A, 600V, UFS Series N-Channel igbt with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL igbt, TO-263AB

File Size 151.95K  /  8 Page

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    HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S

Harris, Corp.
HARRIS[Harris Corporation]
Fairchild Semiconductor
Part No. HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S
OCR Text ...e the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The igbt is ideal for many high voltage switching appli...
Description 24A, 600V, UFS Series N-Channel igbts 4A00V的,的ufs系列N沟道igbt
24A/ 600V/ UFS Series N-Channel igbts

File Size 131.11K  /  6 Page

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    HGTP12N60D1

INTERSIL[Intersil Corporation]
Part No. HGTP12N60D1
OCR Text ...s the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop va...igbt PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 ...
Description 12A/ 600V N-Channel igbt
12A, 600V N-Channel igbt

File Size 31.28K  /  4 Page

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    HGTP15N120C3 HGTG15N120 HGT1S15N12 HGTG15N120C3 HGT1S15N120C3S HGT1S15N120C3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP15N120C3 HGTG15N120 HGT1S15N12 HGTG15N120C3 HGT1S15N120C3S HGT1S15N120C3
OCR Text ...e the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The igbt is ideal for many high voltage switching appli...
Description 35A 1200V UFS Series N-Channel igbts
35A/ 1200V/ UFS Series N-Channel igbts
35A, 1200V, UFS Series N-Channel igbts 35 A, 1200 V, N-CHANNEL igbt, TO-262AA

File Size 138.80K  /  11 Page

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    HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL
OCR Text ...s the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. The igbt used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The igbt is ideal for...
Description 3.3V 72-mc CPLD
21A/ 1200V/ NPT Series N-Channel igbts with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel igbts with Anti-Parallel Hyperfast Diodes

File Size 175.44K  /  8 Page

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For mosfet igbt Found Datasheets File :: 2096    Search Time::3.485ms    
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