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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FSL9230R3 FN4084 FSL9230R4
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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| File Size |
45.44K /
8 Page |
 View
it Online |
Download Datasheet
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Honeywell Sensing
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| Part No. |
VG95328C
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| OCR Text |
...quirements of ground mobile and naval applications. Operation by the Eddy Current Killed Oscillator (ECKO) principle, which is used to detect metallic objects passing in front of the sensing face. Once a target metal is detected, a trigger ... |
| Description |
One Part M30 Proximity Sensor
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| File Size |
175.10K /
3 Page |
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it Online |
Download Datasheet |
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Intersil, Corp.
Intersil Corporation
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| Part No. |
JANSR2N7399
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| OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
| Description |
11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET 11 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET
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| File Size |
43.53K /
8 Page |
View
it Online |
Download Datasheet |
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