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STIM300 1N367 S16NT MA4CS10X 01200 MA4CS10X 0801810 0801810
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    FCB20N60F

Fairchild Semiconductor
Part No. FCB20N60F
OCR Text ... ? 650v @t j = 150c ?typ. r ds(on) = 150 m ? ultra low gate charge (typ. q g = 75 nc) ? low effective output capacitance (typ. c oss .ef...time v dd = 300 v, i d = 20 a r g = 25 ...
Description N-Channel SuperFETFRFETMOSFET 600V, 20A, 190m

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    FCA20N60F

Fairchild Semiconductor
Part No. FCA20N60F
OCR Text ...-ambient 40 c/w * when mounted on the minimum pad size recommended (pcb mount) march 2013 fca20n60f n-channel superfet ? frfet ? mosfe...time v dd = 300v, i d = 20a r g = 25 (note 4, 5) -- 62 135 ns t r turn-on rise time -- 140 290 n...
Description N-Channel SuperFETFRFETMOSFET 600V, 20A, 190m

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    FCA20N60F109

Fairchild Semiconductor
Part No. FCA20N60F109
OCR Text ... ? 650v @t j = 150c ? typ. rds(on)=0.15 ? ? ultra low gate charge (typ. qg=55nc) ? low effective output capacitance (typ. coss.eff=110pf) ?...time v dd = 300v, i d = 20a r g = 25 ? (note 4, 5) -- 62 135 ns t r turn-on rise time -- 140 290 ...
Description Discrete MOSFET

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    2SB1071 2SB1071A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1071 2SB1071A
OCR Text ...ltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf ICBO VCB = -40 V, IE = 0 VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = - 0.1 A VCE = -2 V, IC = -1 A IC = -2 A, IB = - 0.1 A IC = -2 A...
Description Silicon PNP epitaxial planar type

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    ADVANCED POWER ELECTRONICS CORP
Part No. AP9565BGJ
OCR Text ... simple drive requirement r ds(on) 52m fast switching characteristic i d -17a description absolute maximum ratings symbol units v ds v v...time 2 v ds =-20v - 8 - ns t r rise time i d =-8a - 17 - ns t d(off) turn-off delay time r g =3.3 , ...
Description 17 A, 40 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251

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    AP55T10GP-HF AP55T10GP-HF14

Advanced Power Electronics Corp.
Part No. AP55T10GP-HF AP55T10GP-HF14
OCR Text ...s 100v lower gate charge r ds(on) 16.5m fast switching characteristic i d 56a rohs compliant & halogen-free description absolute maxi...time 2 v ds =50v - 20 - ns t r rise time i d =10a - 35 - ns t d(off) turn-off delay time r g =3.3 -...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

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    2SB1091

HITACHI[Hitachi Semiconductor]
Part No. 2SB1091
OCR Text ...emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse Test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 t on t stg tf Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) -20 -10 Collector Cur...
Description Silicon PNP Triple Diffused

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    AP55T10GI-HF AP55T10GI-HF14

Advanced Power Electronics Corp.
Part No. AP55T10GI-HF AP55T10GI-HF14
OCR Text ...s 100v lower gate charge r ds(on) 16.5m fast switching characteristics i d 31.7a rohs compliant & halogen-free description absolute m...time v ds =50v - 19 - ns t r rise time i d =10a - 27 - ns t d(off) turn-off delay time r g =3.3 -37...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

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    AP55T10GH-HF14

Advanced Power Electronics Corp.
Part No. AP55T10GH-HF14
OCR Text ...s 100v lower gate charge r ds(on) 16.5m fast switching characteristic i d 56a rohs compliant & halogen-free description absolute maxi...time 2 v ds =50v - 20 - ns t r rise time i d =10a - 35 - ns t d(off) turn-off delay time r g =3.3 -...
Description Simple Drive Requirement

File Size 54.64K  /  4 Page

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    SQ2328ES-T1-GE3

Vishay Siliconix
Part No. SQ2328ES-T1-GE3
OCR Text ... cycle ? 2 %. b. when mounted on 1" squa re pcb (fr-4 material). c. parametric verification ongoing. product summary v ds (v) 100 r ds(...time c t d(on) v dd = 50 v, r l = 33 ? i d ? 2 a, v gen = 10 v, r g = 1 ? -58 ns rise ...
Description SQ2328ES Automotive N-Channel 100 V (D-S) 175 &#176;C MOSFET

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