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				Fairchild Semiconductor
Part No.	KH300
OCR Text	...ntional op amp designs in which optimum gain-bandwidth product occurs at a high gain, minimum settling time at a gain of -1, maximum slew rate at a gain of +1, et cetera, the KH300 offers consistent performance at gain settings from 1 to 40...
Description	Wideband, High-Speed Operational Amplifier From old datasheet system
File Size	91.60K / 7 Page	View it Online	Download Datasheet

				Agilent Technologies
Part No.	ATF21186
OCR Text	... Parameters and Test Conditions optimum Noise Figure VDS = 2 V, IDS = 15 mA Associated Gain VDS = 2 V, IDS = 15 mA Power at 1 dB Gain Compression VDS = 3 V, IDS = 70 mA 1 dB Compressed Gain VDS = 3 V, IDS = 70 mA Transconductance Saturated ...
Description	TRANSISTOR,JFET,N-CHANNEL,5V V(BR)DSS,80MA I(DSS),MICRO-X From old datasheet system
File Size	57.34K / 8 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
Part No.	ATF-53189
OCR Text	... 3 Gamma Load and Source at optimum OIP3 Tuning Conditions The device's optimum OIP3 measurements were determined using a Maury Load Pull System at 4.0V, 135 mA quiesent bias. Typical Gammas at optimum OIP3 [1] Freq (GHz) 0.9 2.0 3.9 5...
Description	ATF-53189 · Single Voltage E-pHEMT Low Noise 40 dBm OIP3 in SOT-89 package Enhancement Mode Pseudomorphic HEMT in SOT 89 Package
File Size	141.68K / 14 Page	View it Online	Download Datasheet

				Skyworks Solutions Inc.
Part No.	DSM8100-000
OCR Text	...in the range of 2 to 3 seconds. optimum bonding conditions should be determined by trial and error to compensate for slight variations in the condition of the substrate, bonding tip, and the type of device being bonded. Equipment The hea...
Description	Mesa Beam Lead PIN Diode
File Size	59.37K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21S260-12S A2T21S260-12SR3
OCR Text	...58.5 ?26 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contac...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	457.46K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21S160-12S A2T21S160-12SR3
OCR Text	...55.9 ?19 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	452.74K / 13 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) ETC[ETC] HP[Agilent(Hewlett-Packard)]
Part No.	AT-41586-BLK AT-41586-TR1 AT41586
OCR Text	...ffer, oscillator, and mixer. An optimum noise match near 50 in the 1 to 2 GHz frequency range, makes this device easy to use as a low noise amplifier. The AT-41586 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Ali...
Description	Low Cost General Purpose Transistors
File Size	61.28K / 6 Page	View it Online	Download Datasheet

				STANFORD[Stanford Microdevices]
Part No.	SPA-2318
OCR Text	...ation schematic is required for optimum RF performance. Vbias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Schematic. RF input pin. This pin requires the use of an external DC bl...
Description	2150 MHz 1 Watt Power Amplifier with Active Bias
File Size	265.73K / 6 Page	View it Online	Download Datasheet

				Integrated Circuit Systems
Part No.	MK2746 MK2746G MK2746GT
OCR Text	...PCB Layout Recommendations For optimum device performance and lowest output phase noise, the following guidelines should be observed. 1) The 0.01F decoupling capacitor should be mounted on the component side of the board as close to the VD...
Description	133.33 MHz, VIDEO CLOCK GENERATOR, PDSO16 DVD/MPEG CLOCK SOURCE
File Size	83.61K / 5 Page	View it Online	Download Datasheet

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