p-to220-7 pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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p-to220-7 Datasheet PDF File

For p-to220-7 Found Datasheets File :: 2372 Search Time::2.797ms
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				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STP5NB40 STP5NB40FP 5321
OCR Text	...l V DS V DGR V GS ID ID IDM (*) P t ot dv/dt(1) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) G...TO220-F P 3.57 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistan...
Description	N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET From old datasheet system
File Size	70.19K / 7 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STP5NB60 STP5NB60FP 6767
OCR Text	... V DS V DGR V GS ID ID I DM (*) P tot dv/dt(1) V ISO T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k) G a...TO220-FP 3.57 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistanc...
Description	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET N - CHANNEL 600V - 1.8 - 5A - TO-220/TO-220FP PowerMESH TM MOSFET From old datasheet system
File Size	106.93K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STP5NB80 STP5NB80FP 6418
OCR Text	... V DS V DGR V GS ID ID I DM (*) P tot dv/dt(1) V ISO T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k) G a...TO220-FP 3.1 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance...
Description	From old datasheet system N - CHANNEL 800V - 1.8W - 5A - TO-220/TO-220FP PowerMESH] MOSFET N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
File Size	106.52K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics STMicroelectronics N.V.
Part No.	STP5NB90 STP5NB90FP 6166 5NB90 STP5NA90
OCR Text	... V DS V DGR V GS ID ID I DM (*) P tot dv/dt(1) V ISO Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) G ...TO220-FP 3.13 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistanc...
Description	N-CHANNEL 900V - 2.3 OHM - 5A - TO-220/TO-220FP From old datasheet system ZENER DIODES N - CHANNEL PowerMESH MOSFET N - CHANNEL 900V - 2.3 ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET -频道900V - 2.3欧姆- 5A TO-220/TO-220FP PowerMESH MOSFET
File Size	45.04K / 6 Page	View it Online	Download Datasheet

				Power Innovations International, Inc. Power Innovations Limited Power Innovations Ltd
Part No.	TIC106 TIC106D TIC106M TIC106N TIC106S
OCR Text	...ration of 10 s to 20 s. G2 t P Synchronisation V G1 V G2 IT IA tP 0 IRM VA VT 0 tq PMC1AB Figure 2. Circuit-commutated tur...TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see ...
Description	SILICON CONTROLLED RECTIFIERS
File Size	163.60K / 8 Page	View it Online	Download Datasheet

				Power Innovations Ltd Power Innovations Limited
Part No.	TIC108 TIC108D TIC108M TIC108N TIC108S
OCR Text	...ration of 10 s to 20 s. G2 t P Synchronisation V G1 V G2 IT IA tP 0 IRM VA VT 0 tq PMC1AB Figure 2. Circuit-commutated tur...TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see ...
Description	SILICON CONTROLLED RECTIFIERS
File Size	160.97K / 8 Page	View it Online	Download Datasheet

				Power Innovations International, Inc. Power Innovations Limited POINN[Power Innovations Ltd]
Part No.	TIC226 TIC226D TIC226M TIC226N TIC226S
OCR Text	...IPATED vs RMS ON-STATE CURRENT P(av) - Maximum Average Power Dissipated - W 32 28 24 20 16 12 8 4 0 0 2 4 6 8 10 12 14 16 IT(RMS) - RMS On-...TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see ...
Description	700 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220 SILICON TRIACS
File Size	156.92K / 6 Page	View it Online	Download Datasheet

				POINN[Power Innovations Ltd] Power Innovations Limited
Part No.	TIP30 TIP30A TIP30C TIP30B
OCR Text	...ENT 1000 VCE = -4 V TC = 25C t p = 300 s, duty cycle < 2% TCS632AD COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - C...TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see ...
Description	PNP SILICON POWER TRANSISTORS
File Size	84.93K / 6 Page	View it Online	Download Datasheet

				Power Innovations Limited POINN[Power Innovations Ltd]
Part No.	TIP32 TIP32B TIP32C TIP32A
OCR Text	...ENT 1000 VCE = -4 V TC = 25C t p = 300 s, duty cycle < 2% TCS632AA COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - C...TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see ...
Description	3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220 PNP SILICON POWER TRANSISTORS
File Size	85.55K / 6 Page	View it Online	Download Datasheet

				Power Innovations Ltd Power Innovations Limited
Part No.	TIPL760B TIPL760C
OCR Text	...me at end of t1, TJ(max) - TC = P D(peak) * 001 10-5 10-4 10 -3 t1 t2 () ZJC R JC RJC(max) 10 0 10 -2 10-1 t1 - Power Pu...TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see ...
Description	NPN SILICON POWER TRANSISTORS
File Size	159.96K / 7 Page	View it Online	Download Datasheet

For p-to220-7 Found Datasheets File :: 2372 Search Time::2.797ms
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