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  pl-32 Datasheet PDF File

For pl-32 Found Datasheets File :: 4970    Search Time::2.188ms    
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    CA2842C CA2842

MOTOROLA[Motorola, Inc]
Part No. CA2842C CA2842
OCR Text ...ONS -A- S -Z- -F- J V Q 2 PL 0.25 (0.010) S TF M A M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. ...32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd....
Description 22 dB 10-400 MHz 1.2 WATTS WIDEBAND LINEAR AMPLIFIER

File Size 126.47K  /  4 Page

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    BLF6G20-180PN

NXP Semiconductors N.V.
Part No. BLF6G20-180PN
OCR Text ...) 1805 to 1880 VDS (V) 32 PL(AV) (W) 50 Gp (dB) 18 D (%) 29.5 ACPR (dBc) -35[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This devic...
Description Power LDMOS transistor BLF6G20-180PN<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;

File Size 74.43K  /  11 Page

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    Philips
Part No. BLF0810S-180 BLF0810-180 BLF0810-180_S_N_4
OCR Text ....1 881.5 881.5 VDS (V) 28 28 28 PL (W) 140 (PEP) 32 14 Gp (dB) 15.2 15.6 15.6 D (%) 35 26 16 d3 (dBc) -30 - - ACPR (dB) - <-45 (2) <-63 (3) <-52 (2) <-56 (3) Philips Semiconductors Preliminary specification Base station LDMOS trans...
Description Base station LDMOS transistors
From old datasheet system

File Size 129.73K  /  14 Page

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    BGM1014 NXPSEMICONDUCTORS-BGM1014115

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BGM1014 NXPSEMICONDUCTORS-BGM1014115
OCR Text ...Table 1: Symbol VS IS |s21|2 NF PL(sat) Quick reference data Parameter DC supply voltage DC supply current insertion power gain noise figure...32.3 4.2 12.9 Max 6 25 33.0 4.3 Unit V mA dB dB dBm Philips Semiconductors BGM1014 MMIC wideb...
Description BGM1014; MMIC wideband amplifier

File Size 75.16K  /  13 Page

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    AS7C33256PFS32A-166TQCN AS7C33256PFS36A-166TQI AS7C33256PFS36A-166TQIN

Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
Part No. AS7C33256PFS32A-166TQCN AS7C33256PFS36A-166TQI AS7C33256PFS36A-166TQIN
OCR Text ...3256NTF32A AS7C33256NTF36A Mode PL-SCD PL-SCD PL-SCD PL-DCD PL-DCD PL-DCD FT FT FT NTD-PL NTD-PL NTD-PL NTD-FT NTD-FT NTD-FT Speed 166/133 M...32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Alliance Semiconductor P. 3 of 20 ...
Description 3.3V 256K x 32/36 pipelined burst synchronous SRAM 256K X 36 STANDARD SRAM, 9 ns, PQFP100

File Size 513.65K  /  20 Page

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    BLM6G22-30 BLM6G22-30G

NXP Semiconductors
Part No. BLM6G22-30 BLM6G22-30G
OCR Text ...) 2110 to 2170 VDS (V) 28 PL(AV) (W) 2 Gp (dB) 29.5 D (%) 9 IMD3 (dBc) -48[1] ACPR (dBc) -50[1] Test signal: 3GPP; test...32.5 -44.5 -47 Unit dB dB % dBc dBc 27.5 30 8. Application information 8.1 Ruggedness The BLM6G...
Description W-CDMA 2100 MHz to 2200 MHz power MMIC

File Size 86.65K  /  12 Page

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    BLF6G27LS-135 BLF6G27-135

NXP Semiconductors N.V.
Part No. BLF6G27LS-135 BLF6G27-135
OCR Text ... f (MHz) 2500 to 2700 VDS PL(AV) (V) 32 (W) 20 PL(p) Gp (W) 200 16 D ACPR885k ACPR1980k (dBc) (dBc) -67[2] (dB) (%) 22.5 -52[2] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 1...
Description Product description135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor BLF6G27LS-135<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G27LS-135<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;

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    BLS6G2933S-13010 BLS6G2933S-130 BLS6G2933S-130112

NXP Semiconductors N.V.
Part No. BLS6G2933S-13010 BLS6G2933S-130 BLS6G2933S-130112
OCR Text ...F f (GHz) 2.9 to 3.3 VDS (V) 32 PL (W) 130 Gp (dB) 12.5 D (%) 47 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and be...
Description LDMOS S-band radar power transistor

File Size 124.09K  /  12 Page

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    AS7C331MFT36A-10TQC AS7C331MFT32A-85TQC AS7C331MFT32A-75TQCN AS7C331MFT32A-75TQIN AS7C331MFT36A-10TQCN AS7C331MFT32A-10T

ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Part No. AS7C331MFT36A-10TQC AS7C331MFT32A-85TQC AS7C331MFT32A-75TQCN AS7C331MFT32A-75TQIN AS7C331MFT36A-10TQCN AS7C331MFT32A-10TQCN AS7C331MFT36A-85TQCN AS7C331MFT36A-75TQC AS7C331MFT36A-10TQIN AS7C331MFT36A-75TQI AS7C331MFT32_36A.V1.3 AS7C331MFT36A-85TQIN AS7C331MFT32A AS7C331MFT32A-10TQC AS7C331MFT32A-10TQI AS7C331MFT32A-10TQIN AS7C331MFT32A-75TQC AS7C331MFT32A-75TQI AS7C331MFT32A-85TQCN AS7C331MFT32A-85TQI AS7C331MFT32A-85TQIN AS7C331MFT36A-10TQI AS7C331MFT36A-75TQCN AS7C331MFT36A-75TQIN AS7C331MFT36A-85TQC AS7C331MFT36A-85TQI
OCR Text ...C331MNTF32A AS7C331MNTF36A Mode PL-SCD PL-SCD PL-SCD PL-DCD PL-DCD PL-DCD FT FT FT NTD-PL NTD-PL NTD-PL NTD-FT NTD-FT NTD-FT Speed 200/166/1...32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Alliance Semiconductor 3 of 19 AS7...
Description From old datasheet system
LM4040 Precision Micropower Shunt Voltage Reference; Package: SOT-23; No of Pins: 3; Qty per Container: 1000; Container: Reel 1M X 36 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 1M x 32/36 Flow-through synchronous SRAM 1M X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 1M x 32/36 Flow-through synchronous SRAM 1M X 36 STANDARD SRAM, 7.5 ns, PQFP100
LM4040 Precision Micropower Shunt Voltage Reference; Package: SOT-23; No of Pins: 3; Qty per Container: 1000; Container: Reel 1M X 36 STANDARD SRAM, 8.5 ns, PQFP100
LM4040 Precision Micropower Shunt Voltage Reference; Package: SOT-23; No of Pins: 3; Qty per Container: 1000; Container: Reel 1M X 32 STANDARD SRAM, 7.5 ns, PQFP100
LM4040 Precision Micropower Shunt Voltage Reference; Package: TO-92; No of Pins: 3; Qty per Container: 1800; Container: Box 1M X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE, ZENER, 33V 5% 1W
DIODE ZENER SINGLE 1000mW 22Vz 11.5mA-Izt 0.05 5uA-Ir 16.7Vr DO41-GLASS 5K/AMMO
LM4040 Precision Micropower Shunt Voltage Reference; ; Container: Tray

File Size 506.37K  /  19 Page

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    BLF87809

NXP Semiconductors
Part No. BLF87809
OCR Text ... BG DVB-T (8k OFDM) [1] [2] PL (W) 300 300 (peak sync.) [1] PL(PEP) PL(AV) Gp (W) 300 (W) 75 21 21 21 21 D 60 46 45 32 IMD3 -35 -32 [2] (dB) (%) (dBc) 860 860 (ch69) 858 f1 = 860; f2 = 860.1 - Black video signal, sy...
Description UHF power LDMOS transistor

File Size 139.35K  /  18 Page

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