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  Q67100-Q2100 Datasheet PDF File

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    HYB514171BJ-50 HYB514171BJ-50- HYB514171BJ-60 Q67100-Q727 Q67100-Q2021

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB514171BJ-50 HYB514171BJ-50- HYB514171BJ-60 Q67100-Q727 Q67100-Q2021
Description 256k x 16 Bit FPM DRAM 5 V 60 ns
256k x 16 Bit FPM DRAM 5 V 50 ns
256k x 16-Bit Dynamic RAM

File Size 179.75K  /  23 Page

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HUA FENG CIRCUIT





    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. SLE4501 SAB8051 SLE4501K SAB8048 SLE4502 Q67100-H8377
Description Nonvolatile Safety Counter

File Size 346.91K  /  11 Page

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    HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB314100BJ-70 Q67100-Q2035 HYB314100BJ-60

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Infineon Technologies AG
SIEMENS AG
Part No. HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB314100BJ-70 Q67100-Q2035 HYB314100BJ-60
Description 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器
4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20
4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)

File Size 1,156.12K  /  23 Page

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SIEMENS AG
Part No. HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB314175BJ-55 HYB314175BJL-60 HYB314175BJL-55 Q67100-Q2149 HYB314175BJ-50
Description High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)

File Size 1,310.29K  /  24 Page

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    SIEMENS AG
Part No. HYB514405BJL HYB514405BJ-60 Q67100-Q2116
Description 1M x 4-Bit Dynamic RAM(1M x 4-位动RAM (超级页面EDO模式))
RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 1M X 4 EDO DRAM, 60 ns, PDSO20
1M x 4-Bit Dynamic RAM 100万4位动态随机存储器

File Size 1,364.55K  /  25 Page

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SIEMENS AG
Siemens Semiconductor G...
Part No. Q67100-Q2012 HYB514400BJ-70 HYB514400BJL-60 HYB514400BJL-70
Description 1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM

File Size 935.32K  /  24 Page

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SIEMENS AG
Part No. HYB5117400BJ-50- Q67100-Q1088 HYB5117400BJ-50 HYB5117400BJ-60 HYB5117400BJ-70
Description Connector Cover; Leaded Process Compatible:No; Enclosure Color:Gray; For Use With:SB 350 Connector; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 4米4位动态随机存储器
4M x 4-Bit Dynamic RAM

File Size 328.19K  /  26 Page

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    SIEMENS AG
Part No. HYB314405BJL-60 HYB314405BJL-70 Q67100-Q2124
Description 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)
1M x 4-Bit Dynamic RAM

File Size 1,366.47K  /  25 Page

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYM364020GS-60 HYM364020S-60 Q67100-Q982 HYM364020S Q67100-Q2006
Description 4M x 36-Bit Dynamic RAM Module 4M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
4M x 36 Bit FPM DRAM Module with Parity

File Size 52.83K  /  10 Page

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    HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364025S-50 Q67100-Q2367 HYM364025S Q67100-Q2366

INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364025S-50 Q67100-Q2367 HYM364025S Q67100-Q2366
Description 4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72
4M x 36 Bit EDO DRAM Module with Parity

File Size 54.70K  /  10 Page

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