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For recovery fast Found Datasheets File :: 35208    Search Time::2.328ms    
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    IRF3205L IRF3205S IRF3205

IRF[International Rectifier]
Part No. IRF3205L IRF3205S IRF3205
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 110 80 390 200 1.3 20 62 20 5.0 -55 to + 175 300 (1.6mm from ...
Description Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

File Size 144.83K  /  10 Page

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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205PBF
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 110 80 390 200 1.3 20 62 20 5.0 -55 to + 175 300 (1.6mm from ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

File Size 91.40K  /  8 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 21 15 84 3.8 94 0.63 20 350 12 9.4 2.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C ...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 27 19 108 136 0.91 20 350 12 13.6 2.5 -55 to + 175 300 (1.6mm ...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 43 30 150 3.8 200 1.3 20 590 22 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C ...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 152.65K  /  10 Page

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 43 30 150 200 1.3 20 590 22 20 5.0 -55 to + 175 300 (1.6mm fro...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 90.69K  /  8 Page

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    IRF360 IRF360-15

IRF[International Rectifier]
Part No. IRF360 IRF360-15
OCR Text ...perior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of ...
Description Repetitive Avalanche Ratings
TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A)
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

File Size 138.60K  /  7 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 57 40 180 3.8 200 1.3 20 530 28 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 57 40 230 200 1.3 20 28 20 5.8 -55 to + 175 300 (1.6mm from ca...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...A Diode Forward Voltage Reverse recovery Time Reverse recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 36 47 75 A 890 1.3 54 71 V ns nC Conditions MOSFET symbol showing the integral reverse p...
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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