|
|
|
TOSHIBA[Toshiba Semiconductor]
|
Part No. |
GT40G121
|
Description |
Insulated Gate bipolar Transistor silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate bipolar Transistor silicon N Channel IGBT
|
File Size |
139.45K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
INFINEON[Infineon Technologies AG]
|
Part No. |
BFS17W BFS17W.
|
Description |
RF-bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA RF-bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz NPN silicon RF Transistor
|
File Size |
44.03K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|