silicon-gate pdf Datasheet P6 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : NP2520R NTE855 677007 Q48SP1 QA1212XS LC863340 ES51C1 PAT1220C
	Product Description
	Full Text Search

silicon-gate Datasheet PDF File

For silicon-gate Found Datasheets File :: 28300 Search Time::1.891ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy P...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current*9.0 Repetitive Avalanche Ener...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	...west possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HE...Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range 3.0 2.5 10 2...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D1
OCR Text	...extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers ...Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissip...
Description	MOSFET / SCHOTTKY DIODE
File Size	162.75K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D2
OCR Text	...extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers ...Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissip...
Description	MOSFET / SCHOTTKY DIODE
File Size	131.40K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF7807VD1
OCR Text	...extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers ...Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain CurrentQ Power Dissi...
Description	Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管 FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	116.12K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807VD2 IRF7807VD2TR
OCR Text	...extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers ...Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain CurrentQ Power Dissi...
Description	30V FETKY - MOSFET and Schottky Diode in a SO-8 package FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	113.54K / 9 Page	View it Online	Download Datasheet

For silicon-gate Found Datasheets File :: 28300 Search Time::1.891ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |