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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ... to +150 Unit V V A A A A mJ w C C EAR Pch Tch Tstg 1. Pw 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, R...ch - c(t) = s (t) * ch - c ch - c = 5.0C/w, Tc = 25C PDM Pw T D= 0.03 Pw T 0.01 10 ...
Description Silicon P channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ527 2SJ527L 2SJ527S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ527 2SJ527L 2SJ527S
OCR Text ... to +150 Unit V V A A A A mJ w C C EAR Pch Tch Tstg 1. Pw 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, R...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/w, Tc = 25 C Pu lse PDM Pw T 0.03 1s t ho ...
Description    Silicon P channel MOS FET High Speed Power Switching

File Size 53.03K  /  9 Page

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    2SJ528 2SJ528L 2SJ528S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ528 2SJ528L 2SJ528S
OCR Text ... to +150 Unit V V A A A A mJ w C C EAR Pch Tch Tstg 1. Pw 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, R...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/w, Tc = 25 C Pu lse PDM Pw T 0.03 1s t ho ...
Description Power switching MOSFET
Silicon P channel MOS FET High Speed Power Switching

File Size 52.33K  /  9 Page

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    2SJ529 2SJ529L 2SJ529S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ529 2SJ529L 2SJ529S
OCR Text ... to +150 Unit V V A A A A mJ w C C EAR Pch Tch Tstg 1. Pw 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, R...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/w, Tc = 25 C Pu lse PDM Pw T 0.03 1s t ho ...
Description Power switching MOSFET
Silicon P channel MOS FET High Speed Power Switching

File Size 51.89K  /  9 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ... -60 -15 Unit V V A A A A mJ w C C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy channel dissipation ...ch - c(t) = s (t) * ch - c ch - c = 4.17 C/w, Tc = 25 C Pu lse PDM Pw T 0.03 1 ot sh ...
Description Silicon P channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ531

HITACHI[Hitachi Semiconductor]
Part No. 2SJ531
OCR Text ... -72 -18 Unit V V A A A A mJ w C C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy channel dissipation ...ch - c(t) = s (t) * ch - c ch - c = 4.17C/w, Tc = 25C PDM D= Pw T 0.03 Pw T 0.01 10...
Description Silicon P channel MOS FET High Speed Power Switching

File Size 49.99K  /  9 Page

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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ... -80 -20 Unit V V A A A A mJ w C C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy channel dissipation ...ch - c(t) = s (t) * ch - c ch - c = 4.17C/w, Tc = 25C PDM D= Pw T 0.03 Pw T 0.01 10...
Description Silicon P channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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    2SJ533

HITACHI[Hitachi Semiconductor]
Part No. 2SJ533
OCR Text ...-120 -30 Unit V V A A A A mJ w C C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy channel dissipation ...ch - c(t) = s (t) * ch - c ch - c = 3.57C/w, Tc = 25C PDM D= Pw T 0.03 Pw T 0.01 10...
Description Silicon P channel MOS FET High Speed Power Switching

File Size 51.60K  /  9 Page

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    2SJ534

HITACHI[Hitachi Semiconductor]
Part No. 2SJ534
OCR Text ... -72 -18 Unit V V A A A A mJ w C C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy channel dissipation ...ch - c(t) = s (t) * ch - c ch - c = 4.17C/w, Tc = 25C PDM Pw T D= 0.03 Pw T 0.01 10 ...
Description Silicon P channel MOS FET High Speed Power Switching

File Size 51.11K  /  9 Page

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    2SJ535

HITACHI[Hitachi Semiconductor]
Part No. 2SJ535
OCR Text ...-120 -30 Unit V V A A A A mJ w C C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy channel dissipation ...ch - c(t) = s (t) * ch - c ch - c = 3.57 C/w, Tc = 25 C PDM D= Pw T 0.03 0.02 1 0.0 ...
Description Silicon P channel MOS FET High Speed Power Switching

File Size 53.39K  /  9 Page

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