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  512kx16 Datasheet PDF File

For 512kx16 Found Datasheets File :: 123    Search Time::1.438ms    
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    MX29F800T MX29F800TMC-12 MX29F800TMC-70 MX29F800TMC-90 MX29F800TMI-12 MX29F800TMI-90 MX29F800TTC-12 MX29F800TTC-70 MX29F

MCNIX[Macronix International]
Part No. MX29F800T MX29F800TMC-12 MX29F800TMC-70 MX29F800TMC-90 MX29F800TMI-12 MX29F800TMI-90 MX29F800TTC-12 MX29F800TTC-70 MX29F800TTC-90 MX29F800TTI-12 MX29F800TTI-90 MX29F800BTC-70 MX29F800BTC-90 29F800 MX29F800B MX29F800BMC-12 MX29F800BMC-70 MX29F800BMC-90 MX29F800BTA-12 MX29F800BTA-90 MX29F800BTC-12 MX29F800TTA-12 MX29F800TTA-90
OCR Text 512kx16] CMOS FLASH MEMORY FEATURES * 1,048,576 x 8/524,288 x 16 switchable * Single power supply operation - 5.0V only operation for read, erase and program operation * Fast access time: 70/90/120ns * Low power consumption - 50mA maxim...
Description 8M-BIT [1Mx8/512kx16] CMOS FLASH MEMORY

File Size 691.27K  /  42 Page

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    NanoAmp Solutions
Part No. N08T1630CXB
OCR Text ...w Power Asynchronous CMOS SRAM 512kx16 bit Overview The N08T1630CxB is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits. It is designed to be ident...
Description 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit

File Size 206.34K  /  9 Page

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    WEDPNF8M721V-XBX WEDPNF8M721V-1010BC WEDPNF8M721V-1010BI WEDPNF8M721V-1010BM WEDPNF8M721V-1012BC WEDPNF8M721V-1012BI WED

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
Part No. WEDPNF8M721V-XBX WEDPNF8M721V-1010BC WEDPNF8M721V-1010BI WEDPNF8M721V-1010BM WEDPNF8M721V-1012BC WEDPNF8M721V-1012BI WEDPNF8M721V-1012BM WEDPNF8M721V-1015BI WEDPNF8M721V-1015BM WEDPNF8M721V-1210BC WEDPNF8M721V-1210BI WEDPNF8M721V-1210BM WEDPNF8M721V-1212BC WEDPNF8M721V-1212BI WEDPNF8M721V-1212BM WEDPNF8M721V-1215BC WEDPNF8M721V-1015BC WEDPNF8M721V-1215BI WEDPNF8M721V-1215BM
OCR Text ... n User Configurable as 1Mx8 or 512kx16 Access Times of 100, 120, 150ns 3.3 Volt for Read and Write Operations 1,000,000 Erase/Program Cycles * This data sheet describes a product that may or may not be under development and is subject t...
Description 8Mx72 Synchronous DRAM 8Mb Flash Mixed Module Multi-Chip Package 8Mx72同步DRAM 8MB闪存的混合模块多芯片封装

File Size 1,280.17K  /  42 Page

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    NanoAmp Solutions
Part No. N08M163WL1A
OCR Text ...Asynchronous Medical CMOS SRAM 512kx16 bit Overview The N08M163WL1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device is a 4 megabit memory organized as 524,288 words by 16 bits....
Description 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K x 16 bit

File Size 202.84K  /  8 Page

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    AT68166FT-YM25-E AT68166FT-YM25-SCC AT68166FT-YS18-MQ 5962R0622901VXC AT68166FT-YS20-E AT68166FT-YS20-MQ AT68166FT-YS20-

ATMEL Corporation
Part No. AT68166FT-YM25-E AT68166FT-YM25-SCC AT68166FT-YS18-MQ 5962R0622901VXC AT68166FT-YS20-E AT68166FT-YS20-MQ AT68166FT-YS20-SCC AT68166FT-YS20-SR AT68166FT-YS20-SV 5962-0622901QXC AT68166FT-YS18-E AT68166FT-YS18-SCC AT68166FT-YS18-SR AT68166FT-YS18-SV 5962-0622901VXC
OCR Text ...ne bank of 512Kx8, two banks of 512kx16 or four banks of 512Kx8. It combines rad-hard capabilities, a latch-up threshold of 80MeV.cm/mg, a Multiple Bit Upset immunity and a total dose tolerance of 300Krads, with a fast access time. The MCM ...
Description Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi-Chip Module

File Size 316.90K  /  19 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM23C8100DT
OCR Text ...n.c no connection 8m-bit (1mx8 /512kx16) cmos mask rom the km23c8100d(e)t is a fully static mask programmable rom fabricated using silicon gate cmos process technology, and is organized either as 1,048,576 x8 bit(byte mode) or as 524,288 x1...
Description 8M-Bit (1Mx8 /512kx16) CMOS Mask ROM(8M(1Mx8 /512kx16) CMOS掩膜 ROM)

File Size 56.79K  /  4 Page

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    AT68166F-YM20-E AT68166F-YM20-SCC AT68166F-YS18-MQ 5962R0622902VXC 5962-0622902QXC AT68166F-YS18-E AT68166F-YS18-SCC AT6

ATMEL Corporation
Part No. AT68166F-YM20-E AT68166F-YM20-SCC AT68166F-YS18-MQ 5962R0622902VXC 5962-0622902QXC AT68166F-YS18-E AT68166F-YS18-SCC AT68166F-YS18-SR AT68166F-YS18-SV 5962-0622902VXC
OCR Text ...ne bank of 512Kx8, two banks of 512kx16 or four banks of 512Kx8. It combines rad-hard capabilities, a latch-up threshold of 80MeV.cm/mg, a Multiple Bit Upset immunity and a total dose tolerance of 300Krads, with a fast access time. The MCM ...
Description Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module

File Size 308.14K  /  17 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM23C8105D
OCR Text ...n.c no connection 8m-bit (1mx8 /512kx16) cmos mask rom the km23c8105d(g) is a fully static mask programmable rom fabricated using silicon gate cmos process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x ...
Description 8M-Bit (1Mx8 /512kx16) CMOS Mask ROM(8M1Mx8 /512kx16)掩膜ROM)

File Size 89.99K  /  5 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM23V8100D
OCR Text ...n.c no connection 8m-bit (1mx8 /512kx16) cmos mask rom the km23v8100dg is a fully static mask programmable rom fabricated using silicon gate cmos process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x 16...
Description 8M-Bit (1Mx8 /512kx16) CMOS Mask ROM(8M1Mx8 /512kx16) CMOS掩膜ROM)

File Size 81.69K  /  4 Page

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    AT68166F

ATMEL Corporation
Part No. AT68166F
OCR Text ...e bank of 512kx8, two banks o f 512kx16 or four banks of 512kx8. it combines rad-hard capabilities, a latch- up threshold of 80mev.cm2/mg, a multiple bit upset immunity and a total dose tolera nce of 300krads, with a fast access time. the m...
Description Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module

File Size 353.29K  /  17 Page

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