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  -0.7a Datasheet PDF File

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    Savantic
Part No. 2SD425 2SD426
OCR Text ...breakdown voltage 2sd426 i c =0.1a ;i b =0 120 v v (br)ebo emitter-base breakdown voltage i e =10ma ;i c =0 5 v 2sd425 i c =7a; i b =0.7a v cesat collector-emitter saturation voltage 2sd426 i c =6a; i b =0.6a 3.0 v v...
Description Silicon NPN Power Transistors TO-3 package

File Size 100.14K  /  3 Page

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    DMP3056L-17

Diodes Incorporated
Part No. DMP3056L-17
OCR Text ... max t a = +25c - 30v 5 0 m @ v gs = - 10v - 4. 3 a 7 0 m @ v gs = - 4.5v - 3. 7 a description and applications ...7a dynamic characteristics (note 8 ) input capacitance c iss ? ? ds = - 25v, v ...
Description    30V P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 482.81K  /  6 Page

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    TE Connectivity Ltd
Part No. 2-1393154-3 1393154-8 1-1393154-2 1-1393154-7 2-1393154-2 1-1393154-5 9-1415001-1 6-1415001-1 7-1415001-1 8-1415001-1
OCR Text ...dc ?10% 1)2) mw 006 6 4.5 0.6 48 750 012 12 9.0 1.2 192 750 024 24 18.0 2.4 777 741 048 48 36.0 4.8 3072 750 060 60 45.0 6 4845 1) 743 110 110 82.5 11 16133 2) 750 220 220 165.0 22 64533 2) 7...
Description    Mechanical indicator, optional LED and protection diode

File Size 379.40K  /  4 Page

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    Infineon Technologies A...
Part No. SGD02N120 SGB02N120 SGI02N120
OCR Text ...rdering code sgp02n120 1200v 2a 0.11mj 150 c to-220ab q67040-s4270 sgb02n120 to-263ab(d2pak) q67040-s4271 sgd02n120 to-252aa(dpak) q67040-s...7a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case...
Description    Fast S-IGBT in NPT-technology

File Size 383.19K  /  12 Page

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    Microsemi
Part No. APT27GA90BD15 APT27GA90SD15
OCR Text ...lead temperature for soldering: 0.063" from case for 10 seconds 300 combi (igbt and diode) typical applications zvs phase shifted and oth...7a i c = 14a i c = 28a i c = 14a i c = 28a 13v 6v 15v i c = 14a t j = 25c v ce = 720v v ce =...
Description IGBT w/ anti-parallel diode

File Size 226.56K  /  9 Page

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    DMP3030SN-15

Diodes Incorporated
Part No. DMP3030SN-15
OCR Text ...lity classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: finish ? matte tin annealed over copper...7a dynamic characteristics input capacitance c iss ? 160 ? pf v ds = -10v, v gs = 0v f ...
Description    P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 107.10K  /  4 Page

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    DG646BH25

Dynex Semiconductor
Part No. DG646BH25
OCR Text ...c, di gq /dt = 40a/ m s, cs = 2.0 m f rms on-state current a a a 2000 867 1360 units repetitive peak controllable on-state current t hs = 8...7a d.c. dg646bh25 4/19 curves -50 -25 0 25 50 75 100 125 150 junction temperature t j - (?c) fig ...
Description    Gate Turn-off Thyristor

File Size 223.83K  /  19 Page

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