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SeCoS Halbleitertechnol...
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Part No. |
SSD35P03
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OCR Text |
...- 20 - s v ds = -5v, i d = -18a gate-source leakage current i gss - - 100 na v gs = 20v t j =25c - - -1 drain-source leakage current t j =55c i dss - - -5 a v ds = -24v, v gs =0 - - 28 v gs = -10v, i d = -18a s... |
Description |
P-Ch Enhancement Mode Power MOSFET
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File Size |
356.77K /
4 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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Part No. |
AP6921GMT-HF-16
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OCR Text |
...on-resistance 2 v gs =10v, i d =18a - 4 5 m v gs =4.5v, i d =10a - 6.1 8 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.5 3 v g fs forward transconductance v ds =10v, i d =18a - 50 - s i dss drain-source leakage current v d... |
Description |
Simple Drive Requirement
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File Size |
127.95K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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