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  0.0023 Datasheet PDF File

For 0.0023 Found Datasheets File :: 3610    Search Time::2.172ms    
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    ONSEMI[ON Semiconductor]
Part No. 2N6277 2N6275 2N6274 ON0082
OCR Text ...uration Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc * Fast Switching Times @ IC 20 Adc tr = 0.35 s (Max) ts = 0.8 s (Max) tf = 0.25 s (Max) * Complement to 2N6377-79 MAXIMUM RATINGS(1) Rating Collector-Base Voltage Emitter-Base Volta...
Description POWER TRANSISTORS NPN SILICON
From old datasheet system
100, 120, 140, 150 VOLTS 250 WATTS

File Size 169.17K  /  6 Page

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    2N6288 2N6109 2N6107 2N6111 2N6292 ON0079

ON Semiconductor
Part No. 2N6288 2N6109 2N6107 2N6111 2N6292 ON0079
OCR Text ... DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC = 3.0 Adc -- 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc -- All Devices * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 30 Vdc (Min) -- 2N6111, 2N6288 VCEO(sus) = 50 Vdc (M...
Description 39-50-70VOLTS 40 WATTS
POWER TRANSISTORS COMPLEMENTARY SILICON
From old datasheet system

File Size 149.12K  /  4 Page

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    2N6339 2N6341 2N6340 ON0084

ON Semiconductor
Part No. 2N6339 2N6341 2N6340 ON0084
OCR Text ...uration Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc * Fast Switching Times @ IC = 10 Adc tr = 0.3 s (Max) ts = 1.0 s (Max) tf = 0.25 s (Max) * Complement to 2N6436-38 *MAXIMUM RATINGS Rating Collector-Base Voltage Emitter-Base Voltag...
Description 100, 120, 140, 150 VOLTS 250 WATTS
POWER TRANSISTORS NPN SILICON
From old datasheet system

File Size 155.23K  /  4 Page

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    2N6659

Seme LAB
Part No. 2N6659
OCR Text 0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATURES * Switching Regulators * Converters 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. ...
Description N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

File Size 17.93K  /  2 Page

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    2N6718 2N6716 2N6717

ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. 2N6718 2N6716 2N6717
OCR Text 0.5 Amp * Ptot=1 Watt 2N6716 2N6717 2N6718 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tam...
Description NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

File Size 27.14K  /  1 Page

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    Sanyo
Part No. 2SA1370 2SC3467
OCR Text ...:mm 2006B [2SA1370/2SC3467] 6.0 5.0 Features * High breakdown voltage : VCEO200V. * Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP). * Adoption of FBET process. 4.7 0...
Description PNP/NPN Epitaxial Planar Silicon Transistors

File Size 45.83K  /  5 Page

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    Sanyo
Part No. 2SA1469 2SC3746
OCR Text ...ICBO IEBO hFE fT VCB=(-)40V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)1A 70* 100 (-)0.4 (-)80 (-)60 (-)5 0.1 0.5 0.1 Conditions Ratings min typ max (-)0.1 (-)0.1 280* MHz V V V V s s s Unit mA mA VCE=(-)5V, IC=(-)1A VCE(sat) IC=(-)2.5A, IB=...
Description PNP Epitaxial Planar Silicon Transistors 60V/5A High-Speed Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors

File Size 100.25K  /  3 Page

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    2SA1952

ROHM[Rohm]
Part No. 2SA1952
OCR Text 0.15 s at IC = -3A) 2) Low VCE(sat). (Typ. -0.2V at IC/IB = -3/-0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. External dimensions (Units : mm) 2SA1952 (1) 0.9 0.75 5.5 1.5 2.3 5.1 0.9 (3) (2) 2.3 ...
Description High-speed Switching Transistor (−60V/ −5A)
High-speed Switching Transistor (−60V, −5A)
High-speed Switching Transistor (-60V, -5A)

File Size 30.39K  /  2 Page

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    2SA1960

HITACHI[Hitachi Semiconductor]
Part No. 2SA1960
OCR Text ...-- 60 1.3 14.5 2.9 Max -- -- -1.0 -10 -- -- 18 4.0 GHz pF pF Unit V V A A Test conditions I C = -100 A IE = 0 I C = -1 mA RBE = VCB = -60 V IE = 0 VEB = -3 V IC = 0 VCE = -5 V, IC = -50 mA Pulse test VCE = -10 V I C = -50 mA VEB = 0, IC = ...
Description Silicon PNP Transistor
Silicon NPN Epitaxial

File Size 28.42K  /  7 Page

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    2SB1284

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SB1284
OCR Text 0 A PNP OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Symbol Conditions Ratings nit U Storage TemperatureTstg -55*+150 *Z Junction TemperatureTj +150 *Z Collector to Base Voltage V -100 V CBO...
Description Darlington Transistor(-10A PNP)

File Size 295.39K  /  9 Page

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