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  0.19a Datasheet PDF File

For 0.19a Found Datasheets File :: 864    Search Time::3.5ms    
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    FMV23N50E

Fuji Electric
Part No. FMV23N50E
OCR Text ... the gate threshold volta ge (3.0 0. 5v) high avalanche durability applications switching regulators ups (uninterruptible power supply) dc-d...19a v gs =10v - 105 160 nc gate-source charge q gs - 23 35 gate-drain charge q gd - 30 45 avalanche...
Description N-CHANNEL SILICON POWER MOSFET

File Size 405.75K  /  5 Page

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    IRFP9140 FN2292

INTERSIL[Intersil Corporation]
Part No. IRFP9140 FN2292
OCR Text 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energ...19A, 100V * rDS(ON) = 0.200 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited...
Description From old datasheet system
19A 100V 0.200 Ohm P-Channel Power MOSFET
19A, 100V, 0.200 Ohm, P-Channel Power MOSFET

File Size 59.13K  /  7 Page

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    MPS6520 MPS6523

MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MPS6520 MPS6523
OCR Text ... 40 -- VEBO IC PD PD TJ, Tstg 4.0 100 625 5.0 1.5 12 - 55 to +150 -- 25 Vdc mAdc mW mW/C Watts mW/C C -- 25 Vdc 1 2 3 NPN PNP Unit...19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJ...
Description (MPS6520) Amplifier Transistor
Amplifier Transistors

File Size 790.59K  /  12 Page

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    MPS6521 MPS6521_D MPS6523 ON2327

MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
Part No. MPS6521 MPS6521_D MPS6523 ON2327
OCR Text ... IC PD PD TJ, Tstg VCBO 40 -- 4.0 100 625 5.0 1.5 12 - 55 to +150 -- 25 Vdc mAdc mW mW/C Watts mW/C C Symbol VCEO 25 -- -- 25 Vdc 1 2 3 ...19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJ...
Description Amplifier Transistors
Voltage and current are negative for PNP transistors
From old datasheet system

File Size 548.66K  /  12 Page

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    AD9562 2486

Analog Devices
Part No. AD9562 2486
OCR Text ...1999 ADP3157-SPECIFICATIONS (0 C T +70 C, V A CC = 12 V, VIN = 5 V, unless otherwise noted)1 Min 1.283 1.980 3.465 Typ 1.3 2.0 ...19A RTN CCOMP 3600pF 220 220 1nF Figure 2. Typical VRM8.2/8.3/8.4 Compliant Core DC/DC C...
Description Preliminary Data Sheet Dual Pulse Width Modulator
From old datasheet system

File Size 171.35K  /  12 Page

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    IRHYB68130CM IRHYB67130CM

International Rectifier
Part No. IRHYB68130CM IRHYB67130CM
OCR Text ...ion 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 76 mj i ar avalanche current ...19a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs fo...
Description 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package.
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-257AA package.

File Size 118.15K  /  8 Page

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    K3709

Sanyo Semicon Device
Part No. K3709
OCR Text ...lowable power dissipation p d 2.0 w tc=25 c35w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche enargy (si...19a 25 36 s static drain-to-source on-state resistance r ds (on)1 i d =19a, v gs =10v 19 25 m w r ds...
Description Search --To 2SK3709

File Size 61.12K  /  4 Page

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    KEC semiconductor
Part No. KHB019N20F1
OCR Text ...ource on resistance : r ds(on) =0.18 @v gs = 10v qg(typ.)=35nc maximum rating (tc=25 ) * : drain current limited by maximum junction temper...19a v gs =10v (note4,5) - 35 44 nc gate-source charge q gs - 4.8 - gate-drain...
Description (KHB019N20F1 / KHB019N20P1) High Voltage MOSFETs

File Size 104.50K  /  7 Page

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    BCX70GLT1-D

ON Semiconductor
Part No. BCX70GLT1-D
OCR Text ...vdc emitterbase voltage v ebo 5.0 vdc collector current e continuous i c 200 madc thermal characteristics characteristic symbol max unit tot...19a figure 19a. t j , junction temperature ( c) 10 4 -40 i c , collector current (na) figure 20. v...
Description General Purpose Transistors NPN Silicon

File Size 218.59K  /  12 Page

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    IRF6612 IRF6612TR1

IRF[International Rectifier]
Part No. IRF6612 IRF6612TR1
OCR Text ...witching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques 30V MX Ap...19A VDS = VGS, ID = 250A e e mV/C A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C nA VGS ...
Description 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package

File Size 196.23K  /  10 Page

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