1.2mh pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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1.2mh Datasheet PDF File

For 1.2mh Found Datasheets File :: 109 Search Time::4.422ms
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				意法半导
Part No.	VND600-E
OCR Text	... EMAX Ptot Tj Tc TSTG (L=0.12mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=40A) Power dissipation at Tc=25C Junction operating temperature Case operating temperature Storage temperature 136 8.3 Internally limited -40 to 150 -55 to 150 m...
Description	DOUBLE CHANNEL HIGH SIDE DRIVER
File Size	242.09K / 18 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1404
OCR Text	...1) Starting TJ = 25C, L = 0.12mH RG = 25, I AS = 95A. (See Figure 12) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Calculate...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)
File Size	105.33K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	30BQ015TR
OCR Text	...mJ A TJ = 25 C, IAS = 0.5A, L = 12mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. Va = 1.5 x Vr typical Following any rated load condition and with rated VRRM applied IFSM Max. Peak One Cycle Non-Repetitive ...
Description	15V 3A Schottky Discrete Diode in a SMC package
File Size	45.12K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	30BQ040TR
OCR Text	...mJ A TJ = 25 C, IAS = 1.0A, L = 12mH Current decaying linearly to zero in 1 sec Frequency limited by TJ max. Va = 1.5 x Vr typical Following any rated load condition and with rated VRRM applied IFSM Max. Peak One Cycle Non-Repetitive ...
Description	40V 3A Schottky Discrete Diode in a SMC package
File Size	43.69K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDI3632 FDP3632 FDB3632
OCR Text	...es: 1: Starting TJ = 25C, L = 0.12mH, IAS = 75A. 2: Pulse Width = 100s (c)2002 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 Rev. A1 FDB3632 / FDP3632 / FDI3632 Typical Characteristics TA = 25C unless otherwis...
Description	N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhm N-Channel UltraFET Trench MOSFET 100V, 80A, 9m Ohm
File Size	202.68K / 11 Page	View it Online	Download Datasheet

				SYNC POWER Crop.
Part No.	SPN9507 SPN9507T220TGB
OCR Text	...ith Single Pulse ( Tj=25, L = 0.12mH , IAS = 80A , VDD = 60V. ) Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient -55/150 -55/150 2 /W 2009/06/20 Ver.1 Page 2 SPN9507 N-Channe...
Description	N-Channel Enhancement Mode MOSFET
File Size	229.85K / 9 Page	View it Online	Download Datasheet

				Sumida Corporation
Part No.	RCP-109D
OCR Text	... 39m 94m rcp195dnp-123k 123k 12mh 10% 14.3 37m 83m rcp195dnp-153k 153k 15mh 10% 16.8 33m 75m rcp195dnp-183k 183k 18mh 10% 19.2 29m 72m rcp195dnp-223k 223k 22mh 10% 25.8 27m 61m rcp195dnp-273k 273k 27mh 10% 29.5...
Description	POWER INDUCTORS
File Size	182.38K / 2 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMI12N50E
OCR Text	...1 avalanche capability i av l=2.12mh, tch =25c 12 - - a diode forward on-voltage v sd i f =12a, v gs =0v, t ch =25c - 0.88 1.32 v reverse recovery time trr i f =12a, v gs =0v -di/dt=100a/ s, tch=25c - 0.36 - s reverse recovery charge qrr ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	504.52K / 5 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMH09N90E
OCR Text	...9 avalanche capability i av l=5.12mh, t ch =25c 9 - - a diode forward on-voltage v sd i f =9a, v gs =0v, t ch =25c - 0.90 1.35 v reverse recovery time trr i f =9a, v gs =0v -di/dt=100a/ s, tch=25c - 1.8 - s reverse recovery charge qrr - 1...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	411.52K / 5 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMR09N90E
OCR Text	...9 avalanche capability i av l=5.12mh, t ch =25c 9 - - a diode forward on-voltage v sd i f =9a, v gs =0v, t ch =25c - 0.90 1.35 v reverse recovery time trr i f =9a, v gs =0v -di/dt=100a/ s, tch=25c - 1.8 - s reverse recovery charge qrr - 1...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	400.31K / 5 Page	View it Online	Download Datasheet

For 1.2mh Found Datasheets File :: 109 Search Time::4.422ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 |