|
|
|
Renesas Electronics Corporation |
Part No. |
RJP65S08DWA-00#W0
|
Description |
IGBT 650V 200A Wafer
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
RJP65S08DWT-80#X0
|
Description |
IGBT 650V 200A Chip
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
RJP65S08DWT-00#X0
|
Description |
IGBT 650V 200A Chip
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
Part No. |
BUK444-200 BUK444-200A BUK444-200B BUK444
|
Description |
PowerMOS transistor 功率金属氧化物半导体晶体 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk PowerMOS transistor
|
File Size |
76.65K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
Renesas Electronics Corporation |
Part No. |
RJP1CS08DWT-80#X0
|
Description |
IGBT 1250V 200A Chip
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
RJP1CS08DWS-80#W0
|
Description |
IGBT 1250V 200A Sawn
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
RJP65S08DWA-80#W0
|
Description |
IGBT 650V 200A Wafer
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
RJP1CS08DWA-80#W0
|
Description |
IGBT 1250V 200A Wafer
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
Renesas Electronics Corporation |
Part No. |
RJP65S08DWS-80#W0
|
Description |
IGBT 650V 200A Sawn
|
Tech specs |
|
|
|
Official Product Page
|
|
|
|
ST Microelectronics STMICROELECTRONICS
|
Part No. |
BY239-200A BY239-800A BY239-400A BY239-600A
|
Description |
10 A, 200 V, SILICON, RECTIFIER DIODE 10 A, 800 V, SILICON, RECTIFIER DIODE 10 A, 400 V, SILICON, RECTIFIER DIODE 10 A, 600 V, SILICON, RECTIFIER DIODE
|
File Size |
28.06K /
2 Page |
View
it Online |
Download Datasheet |
|
Bom2Buy.com
Price and Availability
|