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60EUA BT168DW P4NC60AF P4NC60AF UM6601E HFB05 74ACT373 4053BP
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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HCTS7266MS HCTS7266D_SAMPLE HCTS7266DMSR HCTS7266HMSR HCTS7266K_SAMPLE HCTS7266KMSR HCTS7266D/SAMPLE HCTS7266K/SAMPLE
OCR Text ... Hardened CMOS SOS * Total Dose 200K RAD (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) * Dose Rate Survivability: >1 x 10 * Dose Rate Upset >10 10 12 RAD (Si)/s ...
Description Radiation Hardened Quad 2-Input Exclusive NOR Gate HCT SERIES, QUAD 2-INPUT XNOR GATE, UUC14
Radiation Hardened Quad 2-Input Exclusive NOR Gate HCT SERIES, QUAD 2-INPUT XNOR GATE, CDFP14

File Size 133.21K  /  8 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4E660411D-TC60 K4E640411D-JC50 K4E640411D-JC60 K4E640411D-TC50 K4E640411D-TC60 K4E660411D K4E660411D-JC50 K4E660411D-JC60 K4E660411D-TC50
OCR Text ...15 5 5 5 5 100 110 -50 13 13 13 200K 25 56 10 60 35 15 200K 0 32 77 47 5 10 5 35 64 64 -60 Max CMOS DRAM Units ns ms ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns us ns ns 15,16,17 15,16,17...
Description 16M x 4bit CMOS Dynamic RAM with Extended Data Out

File Size 405.89K  /  21 Page

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    ISL9440CEVAL1Z

Intersil Corporation
Part No. ISL9440CEVAL1Z
OCR Text ...10u 6.3v co14 10u 6.3v lg1 roc2 200k co12 dnp 6.3v vo2 cf f 2 100p u1 isl9440c isen1 1 pgood 2 vcc_5v 3 vin 4 en/ss1 5 fb1 6 ocset1 7 rst_n 8 g4 9 ldofb 10 sgnd 11 ocset2 12 fb2 13 en/ss2 14 ocset3 15 fb3 16 en/ss3 17 isen3 18 phase3 19 boo...
Description Triple PWM Step-Down Synchronous Buck Controller and One LDO

File Size 1,006.54K  /  11 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E660812E-TC_L K4E640812E K4E640812E-JC_L K4E640812E-TC_L K4E660812E K4E660812E-JC_L K4E640812E-JC/L K4E660812E-JC/L K4E640812E-TC/L K4E660812E-TC/L
OCR Text ... 15 5 5 5 5 100 90 -50 13 13 13 200K 20 47 7 50 30 13 13 52 3 5 10 10 10 10 5 3 3 15 5 5 5 5 100 110 -50 13 13 13 200K 0 27 64 39 5 10 5 28 25 56 10 60 35 15 200K 64 128 0 32 77 47 5 10 5 35 -50 Max Min 10 64 128 -60 Max ns ms ms ns ns ns n...
Description 8M x 8bit CMOS Dynamic RAM with Extended Data Out

File Size 189.50K  /  21 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4E661611D-TC60 K4E641611D-TC50 K4E641611D-TC60 K4E661611D K4E661611D-TC50
OCR Text ...15 5 5 5 5 100 110 -50 13 13 13 200K 25 56 10 60 35 15 0 32 77 47 5 10 5 35 64 64 -60 CMOS DRAM Units Max ns ms ms ns ns ns ns ns ns ns ns ns ns ns 200K ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns us ns ns Note 9,19 ...
Description 4M x 16bit CMOS Dynamic RAM with Extended Data Out

File Size 881.22K  /  36 Page

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    SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416V4100B KM416V4000B KM416V4000BS-6
OCR Text ... 0 13 10 15 10 10 100 90 -50 13 200K 35 76 10 50 30 13 13 0 15 10 15 10 10 100 110 -50 200K 0 36 73 48 53 5 10 5 30 40 85 10 60 35 Min -5 Max 64 128 0 38 83 53 60 5 10 5 Min -6 CMOS DRAM Units Max 64 128 ms ms ns ns ns ns ns ns ns ns ...
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns

File Size 766.35K  /  35 Page

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    SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416V4100C KM416V4000C KM416V4100CS-L5
OCR Text ... 0 13 10 15 10 10 100 90 -50 13 200K 35 76 10 50 30 13 13 0 15 10 15 10 10 100 110 -50 200 0 36 73 48 53 5 10 5 30 40 85 10 60 35 Min -5 Max 64 128 0 38 83 53 60 5 10 5 Min -6 CMOS DRAM Units Max 64 128 ms ms ns ns ns ns ns ns ns ns 3...
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power

File Size 88.18K  /  9 Page

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    4812 4832 4804 4802 4800 4805

Welwyn Components Limited
Part No. 4812 4832 4804 4802 4800 4805
OCR Text ... See table 1 below Notes 0R5 to 200K 33R0 to 300K Approved BS CECC 40-302-002* Power rating at 70C Resistance range Limiting element voltage TCR (-55 to 125C) watts ohms volts ppm/C 4802/12 0.25 100 to 56K 200 5 Resistance toleranc...
Description Ultra Precision Bulk Metal Film Resistors

File Size 129.27K  /  2 Page

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