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  2110 Datasheet PDF File

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    MRF21125S MRF21125 MRF21125SR3

Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
Part No. MRF21125S MRF21125 MRF21125SR3
OCR Text ...lications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-c...
Description RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs

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    BLF6G22-180PN

NXP Semiconductors
Part No. BLF6G22-180PN
OCR Text ...-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 32 PL(AV) (W) 50 Gp (dB) 17.5 D (%) 27.5 ACPR (dBc) -35[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spac...
Description Power LDMOS transistor

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    BLF7G22L-130N

NXP Semiconductors
Part No. BLF7G22L-130N
OCR Text ...rier W-CDMA [1] [2] f (MHz) 2110 to 2170 2110 to 2170 IDq (mA) 950 950 VDS (V) 28 28 PL(AV) (W) 30 33 Gp (dB) 18.5 18.5 D (%) 32 33 ACPR (dBc) -32[1] -39[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at ...
Description Power LDMOS transistor

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    Matsshita / Panasonic
Part No. UN2110 UNR2110 UN2113 UNR2113 UN211H UN211E UN2115 UNR2115 UN211Z UN2111 UNR2111 UN2119 UNR2119 UN211N UN2112 UNR2112 UN211V UN211T UNR2110R UNR2110S UN2115Q
OCR Text 2110/ 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z (UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z) Silicon PNP epitaxial planer transistor 0.650.15 2.8 -0.3 +0.2 Unit: mm ...
Description Octal D-type latch with 3 state output non inverting
TRIPOLAR OVERVOLTAGE PROTECTION FOT TELECOM LINE
Transistors with built-in Resistor

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    B39212B3669U410

TDK Electronics
Part No. B39212B3669U410
OCR Text ...mum insertion attenuation a max 2110.0 ... 2170.0 mhz 3.0 3.5 db amplitude ripple (p-p) da 2110.0 ... 2170.0 mhz 1.0 1.5 db retuen loss input 2110.0 ... 2170.0 mhz 9.0 11.0 db output 2110.0 ... 2170.0 mhz 9.0 11.0 d...
Description SAW Components SAW filter

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    TA0756A

TAI-SAW TECHNOLOGY CO., LTD.
Part No. TA0756A
OCR Text ...enter Frequency Insertion Loss (2110 ~ 2155 MHz) Amplitude Ripple (2110 ~ 2155 MHz) VSWR (2110 ~ 2155 MHz) Attenuation (Reference level from 0 dB) 1800 ~ 2070 2195 ~ 2400 MHz MHz dB dB 25 25 34 40 Fc IL REV. NO.:1 RoHS Compliant Lead fre...
Description SAW Filter 2132.5 MHz SMD 3.0X3.0 mm

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    PTFA210601E PTFA210601F

Infineon Technologies AG
Part No. PTFA210601E PTFA210601F
OCR Text 2110 - 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and therm...
Description Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz

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    NJG1715KC1

New Japan Radio
njr
Part No. NJG1715KC1
OCR Text ... UNITS Operating Frequency freq 2110 2140 2170 MHz LNA Voltage VLNA 2.5 2.85 4.5 V LNA Operating Current ILNA PRF , PLO=OFF 2.8 3.5 mA Small Signal Gain Gain 13.0 15.0 17.0 dB Gain Flatness Gflat fRF =2110~2170MHz 0.5 1.0 dB Noise Figure NF...
Description W-CDMA FRONT-END GaAs MMIC for W-CDMA

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    A2T21H360-23N A2T21H360-23NR6

NXP Semiconductors
Part No. A2T21H360-23N A2T21H360-23NR6
OCR Text ...covering the frequency range of 2110 to 2200 mhz. 2100 mhz ? typical doherty single--carrier w--cdma characterization performance: v dd =28vdc,i dqa = 500 ma, v gsb =0.7vdc,p out =63wavg., input signal par = 9.9 db @ 0.01% probability on cc...
Description N--Channel Enhancement--Mode Lateral MOSFET

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    PTF210901 PTF210901E

INFINEON[Infineon Technologies AG]
Part No. PTF210901 PTF210901E
OCR Text 2110-2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two-Carrier WCDMA Drive-U...
Description LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz

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