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Mitsubishi Electric Sem...
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Part No. |
MGF1953A
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OCR Text |
...
(Ta=25C)
ID vs. VDS
300 Ta=25deg.C VGS=-0.2V/STEP
ID vs. VGS
Ta=25deg.C VDS=4V
250
200
VGS=0V
DRAIN CURRENTID(mA)
8.0 9.0 10.0
DRAIN CURRENT ID(mA)
150
100
50
0 0.0 1.0 2.0 3.0 4... |
Description |
Microwave Power MES FET
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File Size |
140.59K /
5 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric
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Part No. |
MGFK44A4045
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OCR Text |
...) absolute maximum ratings (ta=25deg.c) symbol parameter ratings unit vgdo gate to drain voltage -15 v < keep safety first in your circuit designs! > vgso gate to source voltage -10 v mitsubishi electric corporation puts the maximum effort... |
Description |
BAND 25W INTERNALLY MATCHED GaAs FET
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File Size |
379.83K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Semiconductor
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Part No. |
RD04HMS2
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OCR Text |
...cteristics @f=135 to 175mhz ta=+25deg.c, vds=12.5v,idq=0.1a, pin=0.2w
silicon rf power semiconductors rd04hms2 rohs compliance, silicon mosfet power transistor, 175mhz, 950mhz, 4w rd 04hms2 7 feb 2011 4 / 20 electrostatic sensitive device... |
Description |
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
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File Size |
1,155.94K /
20 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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Part No. |
MGF0915A
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OCR Text |
... pin(dbm) po(dbm) tc=80deg.c tc=25deg.c tc=-20deg.c gp v.s. pin freq.=2.5ghz 3 4 5 6 7 8 9 10 11 12 13 5 10 15 20 25 30 35 pin(dbm) gp(db) tc=80deg.c tc=25deg.c tc=-20deg.c id(rf) v.s. pin freq.=2.5ghz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 5 10 ... |
Description |
L & S BAND GaAs FET[ SMD non - matched ]
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File Size |
1,318.88K /
48 Page |
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it Online |
Download Datasheet |
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Price and Availability
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