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  3 3v 4mx16 8mx8 cmos synchrono Datasheet PDF File

For 3 3v 4mx16 8mx8 cmos synchrono Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM5364003CSW KMM5364003CSWG
Description 4M x 36 DRAM SIMM Using 4mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

File Size 386.23K  /  20 Page

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    Samsung Electronic
Part No. M366S1623ETS
Description 16Mx64 SDRAM DIMM based on 8mx8, 4Banks, 4K Refresh, 3.3V synchronous DRAMs with SPD Data Sheet

File Size 167.13K  /  11 Page

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    Samsung Electronic
Part No. M366S1623FTS
Description 16Mx64 SDRAM DIMM based on 8mx8, 4Banks, 4K Refresh, 3.3V synchronous DRAMs with SPD Data Sheet

File Size 165.89K  /  11 Page

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    Samsung Electronic
Part No. M366S0823ETS
Description 8Mx64 SDRAM DIMM based on 8mx8, 4Banks, 4K Refresh,3.3V synchronous DRAMs with SPD Data Sheet

File Size 167.96K  /  11 Page

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    Samsung Electronic
Part No. M366S0823FTS
Description 8Mx64 SDRAM DIMM based on 8mx8, 4Banks, 4K Refresh, 3.3V synchronous DRAMs with SPD Data Sheet

File Size 160.98K  /  11 Page

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    M366S1623ET0

Samsung semiconductor
Samsung Electronic
Part No. M366S1623ET0
Description 16Mx64 SDRAM DIMM based on 8mx8, 4Banks, 4K Refresh, 3.3V synchronous DRAMs with SPD Data Sheet

File Size 167.46K  /  12 Page

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    Samsung Semiconductor Co., Ltd.
Part No. KMM5364003BSW
Description 4M x 36 DRAM SIMM Using 4mx16 & Quad CAS 4Mx4, 4K Refresh, 5V 4米36的DRAM上海药物研究所使用4mx16

File Size 355.45K  /  18 Page

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    Samsung Electronic
Part No. K1B6416B6C
Description 4mx16 bit synchronous Burst Uni-Transistor Random Access Memory

File Size 769.92K  /  46 Page

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    K1S6416BCC K1S6416BCC-I

Samsung semiconductor
Part No. K1S6416BCC K1S6416BCC-I
Description 4mx16 bit Page Mode Uni-Transistor Random Access Memory

File Size 133.21K  /  10 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K1B6416B6C
Description 4mx16 bit synchronous Burst Uni-Transistor Random Access Memory

File Size 765.70K  /  46 Page

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