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For 3-field Found Datasheets File :: 33383 Search Time::2.406ms
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				NEC[NEC]
Part No.	2SJ411 D11219EJ1V0DS00
OCR Text	...0 MAX. 1.2 2.0 0.8 0.1 3.0 MAX. FEATURES * Radial taping supported * Can be directly driven by 5-V IC * Low ON resistance RDS(on) = 0.24 MAX. @VGS = -4 V, ID = -2.5 A RDS(on) = 0.11 MAX. @VGS = -10 V, ID = -2.5 A 0.6 0.1 0...
Description	P-CHANNEL SIGNAL MOS FET FOR SWITCHING From old datasheet system
File Size	67.31K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ448
OCR Text	...NSIONS (in millimeters) 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES * Low On-Resistance RDS(on) = 2.0 MAX. (@ VGS = -10 V, ID = -2.0 A) * * * * 15.0 0.3 3 0.1 4 0.2 Built-in G-S Gate Protection Diodes High Avalanche Capab...
Description	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	117.41K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ449 2SJ449JM
OCR Text	...NSIONS (in millimeters) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 FEATURES * Low On-Resistance RDS(on) = 0.8 MAX. (@ VGS = -10 V, ID = -3.0 A) 15.0 0.3 12.0 0.2 13.5 MIN. * Low Ciss Ciss = 1040 pF TYP. * High Avalanche Capability Rating...
Description	Pch vertical DMOS FET MP-45F SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	116.80K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ462 D11449EJ1V0DS00
OCR Text	... directly by an IC operating at 3 V. The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for applications such as power management. Package Drawings (unit : mm) 5.7 0.1 2.0 0....
Description	From old datasheet system P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
File Size	60.02K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ463 2SJ463A D11198EJ1V0DS00
OCR Text	... Package Drawings (unit: mm) 0.3 +0.1 -0 2.0 0.2 0.65 0.65 2 2.1 0.1 1.25 0.1 * Can be driven by a 2.5 V power source. 0.3 * Low Gate Cut-off Voltage. Marking ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate...
Description	From old datasheet system P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
File Size	60.00K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text	...e) 2. PW 10 s, Duty Cycle 1 % 3. Starting Tch = 25 C, RA = 25 , VGS = -20 V 0 THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.79 83.3 C/W C/W The information in this document is subject to change withou...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	70.31K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ493 D11265EJ3V0DS00
OCR Text	...e) 2. PW 10 s, Duty Cycle 1 % 3. Starting Tch = 25 C, RA = 25 , VGS = -20 V 0 THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 4.17 62.5 C/W C/W The information in this document is subject to change withou...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	64.87K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ494 D11266EJ2V0DS00
OCR Text	...MENSIONS (in millimeter) 10.00.3 4.50.2 3.20.2 2.70.2 15.00.3 30.1 40.2 FEATURES * Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = -10 V, ID = -10 A) RDS(on)2 = 88 m: Max. (VGS = -4 V, ID = -10 A) * Low Ciss Ciss = 236...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	68.73K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text	...SIONS (in millimeter) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 FEATURES * Super Low On-State Resistance 3 0.1 4 0.2 RDS(on)2 = 56 m MAX. (VGS = -4 V, ID = -15 A) * Low Ciss Ciss = 4120 pF TYP. * Built-in Gate Protection Diode ABS...
Description	From old datasheet system MOS Field Effect Power Transistors SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	72.23K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ557 2SJ557-T2B 2SJ557-T1B
OCR Text	...0.65-0.15 +0.1 2.8 0.2 3 1.5 0 to 0.1 1 2 FEATURES * Can be driven by a 4 V power source * Low on-state resistance RDS(on)1 = 155 m MAX. (VGS = -10 V, ID = -1.0 A) RDS(on)2 = 255 m MAX. (VGS = -4.5 V, ID = -1.0 A) RDS(on...
Description	Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	60.99K / 8 Page	View it Online	Download Datasheet

For 3-field Found Datasheets File :: 33383 Search Time::2.406ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |