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Cystech Electonics Corp...
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Part No. |
MTB09N06F3-0-T7-X
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OCR Text |
... (note 3) i dm 240 continuous drain current @ t a =25 c (note...0.1mh (note 3) e ar 14 mj t c =25 c ... |
Description |
N-Channel Enhancement Mode Power MOSFET
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File Size |
338.19K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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Part No. |
MTB020N6KE3-0-UB-X
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OCR Text |
... (note 3) e ar 5 mj t c =25 c (note 1) 50 t c =100c ...0.063 in(1.6mm) from case for 10 seconds t l 300 maximum temperature for soldering @ package bo... |
Description |
N-Channel Enhancement Mode Power MOSFET
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File Size |
349.34K /
8 Page |
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it Online |
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Cystech Electonics Corp...
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Part No. |
MTB370N10KL3-0-T3-G
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OCR Text |
... l=10mh, i as =3a, v gs =10v *3 e as 45 mj t a =25 2.7 total power dissipation *2 t a =100 p d 1.1...0.08 - v/ c reference to 25 c, i d =250 a v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250 a i... |
Description |
N-channel Enhancement Mode MOSFET
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File Size |
424.85K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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Part No. |
MTB1K0N20KL3-0-T3-G
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OCR Text |
...25 mj esd susceptibility *3 v esd 6000 v total power dissipation @t a =25 2.4 total power dissipation @t a =70...0.83 1.08 v gs =10v, i d =2a r ds(on) *1 - 0.78 1.6 v gs =4.5v, i d =1a dyna... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
363.52K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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Part No. |
MTB020N03KL3-0-T3-G
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OCR Text |
...d date : 2016.02.22 page no. : 3/9 mtb020n03kl3 cystek product specification *qg - 12.3 - *qgs - 1.3 - *qgd - 4.2 - nc v ds =24v, i d =4a, v gs =5v source-drain diode *v sd - 0.81 1.2 v v gs =0v, i s =2a *i s ... |
Description |
30V N-channel Enhancement Mode MOSFET
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File Size |
425.34K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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Part No. |
MTB150N10N3-0-T1-G
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OCR Text |
... @ t a =25 c, v gs =10v (note 3) 1.9 continuous drain current @ t a =70 c, v gs =10v (note 3) i d 1.5 pulsed drain current (not...0.8 w operating junction and storage temperature range tj ; tstg -55~+150 c note : 1.... |
Description |
100V N-Channel Enhancement Mode MOSFET
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File Size |
344.56K /
9 Page |
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it Online |
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Cystech Electonics Corp...
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Part No. |
MTA050B01DFA6-0-T1-G
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OCR Text |
....3a r dson @v gs =-4.5v, i d =-3.6a 39m ( typ .) r dson @v gs =-2.5v, i d =-3.2a 55m ( typ .) r dson @v gs =-1.8v, i d =-1.0a 69m ...0.01 w / c operating junction and storage temperature tj, tstg -55~+150 c note : 1.surfac... |
Description |
Dual P-Channel Enhancement Mode MOSFET
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File Size |
488.28K /
10 Page |
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it Online |
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Cystech Electonics Corp...
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Part No. |
MTD010P03V8-0-T6-G
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OCR Text |
...pping mtd010p03v8-0-t6-g dfn3 3 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel dfn3 3 mtd010p03v8 pin 1 g gate s source d drain environment friendly grade : s for rohs compliant produc... |
Description |
P-Channel Enhancement Mode Power MOSFET
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File Size |
359.47K /
10 Page |
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it Online |
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Cystech Electonics Corp...
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Part No. |
MTB020N03KV8-0-T6-G
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OCR Text |
... outline mtb020n03kv8 dfn3 3 pin 1 g gate d drain s source ordering information device package shipping mtb020n03kv8-0-t6-g dfn3 3 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel envir... |
Description |
N -Channel Enhancement Mode Power MOSFET
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File Size |
452.15K /
9 Page |
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it Online |
Download Datasheet
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Cystech Electonics Corp...
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Part No. |
MTB020A03KV8-0-T6-G
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OCR Text |
...ping mtb020a03kv8-0-t6-g dfn3 3 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel mtb020a03kv8 dfn3 3 g gate s source d drain bv dss 30v 6.6a i d @v gs =10v, t a =25 c 12a i d @v gs... |
Description |
Dual N-Channel Enhancement Mode MOSFET
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File Size |
454.90K /
9 Page |
View
it Online |
Download Datasheet
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