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For 300-gd Found Datasheets File :: 13289 Search Time::1.609ms
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				IRF[International Rectifier]
Part No.	IRF7389 IRF7389TR
OCR Text	... Ciss Coss 12 600 8 300 Crss 4 0 1 10 100 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge V...
Description	Generation v technology 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
File Size	210.72K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF740B IRFS740B IRF740
OCR Text	...seconds 134 1.08 -55 to +150 300 44 0.35 * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal...
Description	400V N-Channel MOSFET
File Size	892.13K / 10 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 SGS Thomson Microelectronics
Part No.	IRF740S 6111
OCR Text	...ldering Purpose 1.0 62.5 0.5 300 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, ...gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond...
Description	N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET) N沟道400V -0.48Ω- 10A条，采用D2PAK PowerMESHTM MOSFET的（不适用沟道MOSFET的） N-Channel 400V-0.48Ω-10A- D2PAK PowerMESHTM MOSFET(N沟道MOSFET) From old datasheet system N - CHANNEL 400V - 0.48 - 10 A -D 2 PAK PowerMESH TM MOSFET N - CHANNEL 400V - 0.48 ohm - 10 A - D2PAK PowerMESH] MOSFET N - CHANNEL 400V - 0.48 Ohm -10 A -D 2 PAK PowerMESH MOSFET
File Size	92.44K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
Part No.	IRF740 3010 -IRF740
OCR Text	...ldering Purpose 1.0 62.5 0.5 300 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, R...gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Con ...
Description	N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET -频道400V - 0.48欧姆- 1020 PowerMESH] MOSFET From old datasheet system N - CHANNEL 400V - 0.48 - 10 A - TO-220 PowerMESH TM MOSFET N - CHANNEL 400V - 0.48 Ohm - 10 A - TO-220 PowerMESH MOSFET
File Size	92.17K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFL014N
OCR Text	...rf.com 3 IRFL014N 350 300 C , Capacitance (pF) 250 C iss C oss 200 150 V G S , G ate-to-S ource V oltage (V ) ...gd C ds + C g d 20 I D = 1.7 A V D S = 44 V V D S = 28 V V D S = 11 V 16 12 8 100 ...
Description	55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的，1.9AN沟道HEXFET功率MOSFET5V的，1.9A沟道的HEXFET功率马鞍山场效应管） Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A) Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
File Size	140.28K / 8 Page	View it Online	Download Datasheet

				Zetex Semiconductors
Part No.	ZXM61N02 ZXM61N02F ZXM61N02FTA ZXM61N02FTC
OCR Text	...=16V C - Capacitance (pF) 300 Ciss Coss Crss VGS=0V f=1MHz 3 2 1 200 100 0 0.1 1 10 100 0 0 1 2 3 VDS - Drain-Source Voltage (V) Q - Charge (nC) Capacitance v Drain-Source Voltage ...
Description	N-channel MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	214.97K / 7 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZXM61P02 ZXM61P02F ZXM61P02FTA ZXM61P02FTC
OCR Text	... (V) C - Capacitance (pF) 300 250 200 150 100 50 0 0.1 1 10 Vgs=0V f=1MHz 5 ID=-0.61A 4 VDS=-16V Ciss Coss Crss 3 2 1 0 100 0 0.5 1 1.5 2 2.5 3 -VDS - Drain Source Voltage (V) Q -Charge (...
Description	P-channel MOSFET 20V P-CHANNEL ENHANCEMENT MODE MOSFET
File Size	227.66K / 7 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZXM61P03 ZXM61P03F ZXM61P03FTA ZXM61P03FTC
OCR Text	...-VGS - Gate-Source Voltage (V) 300 Vgs=0V f=1MHz 14 ID=-0.6A C - Capacitance (pF) 250 200 150 100 50 0 Ciss Coss Crss 12 10 VDS=-24V 8 6 4 2 0 0 0.5 1 VDS=-15V 0.1 1 10 100 1.5 2 2.5 3 3.5 ...
Description	P-channel MOSFET 30V P-CHANNEL ENHANCEMENT MODE MOSFET Circular Connector; No. of Contacts:23; Series:; Body Material:Aluminum; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-99; MIL SPEC:MIL-C-26482 Series I RoHS Compliant: No
File Size	228.84K / 7 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZXM62N02E6 ZXM62N02E6TA ZXM62N02E6TC
OCR Text	...citance (pF) 700 600 500 400 300 200 100 0 0.1 1 10 100 Ciss Coss Crss VDS=16V 1 2 3 4 5 6 VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Char...
Description	N-channel MOSFET-Not recommended for new designs 20V N-CHANNEL ENHANCEMENT MODE MOSFET Circular Connector; No. of Contacts:23; Series:; Body Material:Aluminum; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-99; MIL SPEC:MIL-C-26482 Series I RoHS Compliant: No
File Size	185.58K / 7 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC
OCR Text	...C - Capacitance (pF) 500 400 300 200 100 0 Ciss Coss Crss 0.1 1 10 100 VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Wav...
Description	N-channel MOSFET-Not recommended for new designs 30V N-CHANNEL ENHANCEMENT MODE MOSFET Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3122; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
File Size	186.91K / 7 Page	View it Online	Download Datasheet

For 300-gd Found Datasheets File :: 13289 Search Time::1.609ms
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