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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MHVIC2114R2
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| OCR Text |
... -- -- 32 0.3 - 13 - 60 1.7 0.2 36 0.5 - 10 - 57 -- -- dB dB dB dBc ns
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Not... |
| Description |
2100 MHz, 27 V, 23 dBm Single W–CDMA RF LDMOS Wideband Integrated Power Amplifier
From old datasheet system
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| File Size |
644.48K /
8 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MMG3013NT1
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| OCR Text |
...d Order Output Intercept Point: 36 dBm @ 900 MHz * Single 5 Volt Supply * Internally Matched to 50 Ohms * Low Cost SOT -89 Surface Mount Pac...ohm system
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 90 mA, TC = 25C)
Characteristic ... |
| Description |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
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| File Size |
206.11K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
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| OCR Text |
...B 31 -- 52 100 33.5 - 15 54 112 36 - 10 -- -- dB dB % W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 50 W Avg., IDQ1 = 230 mA, IDQ2 = 870 mA, 869-894 MHz and 920-960 MHz EDGE Modu... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
871.22K /
23 Page |
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it Online |
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NEC[NEC]
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| Part No. |
NEL2035F03-24
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| OCR Text |
...W 20
20
24
28
32
36
40
44
Pout (dBm)
-25 f1 = 1970 MHz f2 = 1970.1 MHz Class AB, Vcc = 24 V Iq = 100 mA Class A, ...ohm
f [GHz] 1.80 1.90 1.97 2.00
Zin [ohm] 2.6 + j8.4 2.3 + j7.0 2.3 + j6.5 1.6 + j5.6
Zout ... |
| Description |
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
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| File Size |
105.39K /
12 Page |
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it Online |
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Price and Availability
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