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  39a Datasheet PDF File

For 39a Found Datasheets File :: 388    Search Time::1.437ms    
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    ADPOW[Advanced Power Technology]
Part No. APTC60HM70SCTG
OCR Text ...RDSon = 70m max @ Tj = 25C ID = 39a @ Tc = 25C Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Q1 CR1B CR3B Q3 Features * G3 S3 G1 S1 CR2A OUT1 OUT2 CR4A Q2 CR2B CR4B ...
Description Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module

File Size 340.35K  /  8 Page

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    ADPOW[Advanced Power Technology]
Part No. APTC60HM70T3 APTC60HM35T3
OCR Text 39a @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies 11 22 19 Q2 23 8 Q4 7 10 Power Module 13 14 Q1 Q3 18 Features * - Ultra low RDSon - Low Miller capacitance - Ultra l...
Description Full - Bridge Super Junction MOSFET Power Module

File Size 334.46K  /  6 Page

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    APTM100AM90F

Advanced Power Technology
Part No. APTM100AM90F
OCR Text ... Min Typ VGS = 10V, ID = 39a VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V 90 3 Max 1 3 105 5 250 Unit mA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characterist...
Description Phase leg MOSFET Power Module

File Size 299.87K  /  6 Page

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    APTM100DUM90

Advanced Power Technology
Part No. APTM100DUM90
OCR Text ... V mA m V nA VGS = 10V, ID = 39a VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Re...
Description Dual common source MOSFET Power Module

File Size 299.63K  /  6 Page

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    APTM100SKM90

Advanced Power Technology
Part No. APTM100SKM90
OCR Text ... V mA m V nA VGS = 10V, ID = 39a VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Re...
Description Buck chopper MOSFET Power Module

File Size 300.68K  /  6 Page

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    HUF76432P3 HUF76432S3S

Fairchild Semiconductor
Part No. HUF76432P3 HUF76432S3S
OCR Text ... VGS = 10V (Figures 9, 10) ID = 39a, VGS = 5V (Figure 9) ID = 37A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA TO-220AB and TO-263AB 1.15 62 oC/W oC/W T...
Description 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

File Size 213.31K  /  10 Page

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    IRL3302PBF

International Rectifier
Part No. IRL3302PBF
OCR Text ...hroughout the industry. ID = 39a TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4....
Description HEXFET Power MOSFET

File Size 132.38K  /  8 Page

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    IRG4PC50FPBF

International Rectifier
Part No. IRG4PC50FPBF
OCR Text ... typ. = 1.45V @VGE = 15V, IC = 39a n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-sta...
Description Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR

File Size 302.36K  /  8 Page

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    BSD223P

Infineon Technologies A...
Infineon Technologies AG
Philips Semiconductors
Part No. BSD223P
OCR Text ... Reverse diode dv/dt IS =-0.39a, VDS =-16V, di/dt=200A/s, Tjmax =150C Gate source voltage Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-07-04 Preliminary data ...
Description Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-363
OptiMOS -P Small-Signal-Transistor
CHOKE RF COATED 1.8UH 10%

File Size 73.41K  /  8 Page

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    Intersil, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA76432S3S HUFA76432P3 HUFA76432S3ST
OCR Text ... VGS = 10V (Figures 9, 10) ID = 39a, VGS = 5V (Figure 9) ID = 37A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA TO-220AB and TO-263AB 1.15 62 oC/W oC/W T...
Description TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 55A条(丁)|63AB
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

File Size 213.72K  /  10 Page

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