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    TC58FVT641-10 TC58FVT641-70 TC58FVT641FT-70 TC58FVB641FT-10 TC58FVB641FT-70 TC58FVB641XB-10 TC58FVB641XB-70

TOSHIBA[Toshiba Semiconductor]
Part No. TC58FVT641-10 TC58FVT641-70 TC58FVT641FT-70 TC58FVB641FT-10 TC58FVB641FT-70 TC58FVB641XB-10 TC58FVB641XB-70
OCR Text ... 8,388,608 words x 8 bits or as 4,194,304 words x 16 bits. The TC58FVT641/B641 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Progra...
Description TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 590.42K  /  53 Page

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    TC58FVT641 TC58FVB641FT-10 TC58FVB641XB-70 TC58FVB641XB-10 TC58FVB641FT-70 TC58FVT641XB-70 TC58FVB641 TC58FVB641FT TC58F

TOSHIBA[Toshiba Semiconductor]
Part No. TC58FVT641 TC58FVB641FT-10 TC58FVB641XB-70 TC58FVB641XB-10 TC58FVB641FT-70 TC58FVT641XB-70 TC58FVB641 TC58FVB641FT TC58FVB641FTXB-10 TC58FVB641FTXB-70 TC58FVT641XB-10
OCR Text ... 8,388,608 words x 8 bits or as 4,194,304 words x 16 bits. The TC58FVT641/B641 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Progra...
Description 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
64-MBIT (8M 8 BITS / 4M 16 BITS) CMOS FLASH MEMORY

File Size 586.97K  /  53 Page

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    V29C31004B V29C31004T

Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Part No. V29C31004B V29C31004T
OCR Text 4 MEGABIT (524,288 x 8 BIT) 3.3 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 512Kx8-bit Organization Address ...194,304 Bit Memory Cell Array A0-A18 Address buffer & latches Y-Decoder CE OE WE Cont...
Description 4 MEGABIT 524,288 x 8 BIT 3.3 VOLT CMOS FLASH MEMORY
4 MEGABIT 524/288 x 8 BIT 3.3 VOLT CMOS FLASH MEMORY

File Size 66.98K  /  15 Page

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    V29C51004B V29C51004T V29C51004T-70J V29C51004T-70T V29C51004T-90T V29C51004B-70J V29C51004B-70T

Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Part No. V29C51004B V29C51004T V29C51004T-70J V29C51004T-70T V29C51004T-90T V29C51004B-70J V29C51004B-70T
OCR Text 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 512Kx8-bit Organization Address Ac...194,304 Bit Memory Cell Array A0-A18 Address buffer & latches Y-Decoder CE OE WE Cont...
Description x8 Flash EEPROM x8闪存EEPROM
4 MEGABIT 524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY

File Size 66.57K  /  15 Page

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    V29C51400B V29C51400T

Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Part No. V29C51400B V29C51400T
OCR Text 4 MEGABIT (262,144 x 16 BIT/524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 256K x 16-bit or ...194,304 Bit Memory Cell Array A0-A17 Address buffer & latches Y-Decoder RY/BY CE OE WE B...
Description 4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY

File Size 68.28K  /  16 Page

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    VG26S17400EJ-5 VG26S17400EJ-6 VG26V17400EJ-5 VG26V17400EJ-6 VG26VS17400E

VML[Vanguard International Semiconductor]
Part No. VG26S17400EJ-5 VG26S17400EJ-6 VG26V17400EJ-5 VG26V17400EJ-6 VG26VS17400E
OCR Text 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only backup, portable elec...
Description 4,194,304 x 4 - Bit CMOS Dynamic RAM

File Size 207.43K  /  25 Page

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    VG26S17400FJ-5 VG26S17400FJ-6 VG26V17400FJ-5 VG26V17400FJ-6 VG26VS17400FJ VG2617400FJ

VML[Vanguard International Semiconductor]
Part No. VG26S17400FJ-5 VG26S17400FJ-6 VG26V17400FJ-5 VG26V17400FJ-6 VG26VS17400FJ VG2617400FJ
OCR Text 4,194,304 x 4 - Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only backup, portable elec...
Description 4,194,304 x 4 - Bit CMOS FPM Dynamic RAM
4,194,304 x 4 - Bit CMOS Dynamic RAM

File Size 207.03K  /  25 Page

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    VG26S17405J-5 VG26S17405J-6 VG26V17405J-5 VG26V17405J-6 VG26VS17405FJ VG2617405FJ

VML[Vanguard International Semiconductor]
Part No. VG26S17405J-5 VG26S17405J-6 VG26V17405J-5 VG26V17405J-6 VG26VS17405FJ VG2617405FJ
OCR Text 4,194,304 x 4 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single ...
Description 4,194,304 x 4 - Bit CMOS EDO Dynamic RAM
4,194,304 x 4 - Bit CMOS Dynamic RAM

File Size 242.45K  /  27 Page

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    VG36128161A VG36128401A VG36128801A

VML[Vanguard International Semiconductor]
Part No. VG36128161A VG36128401A VG36128801A
OCR Text ...organized as 8,388,608 - word x 4 -bit x 4 - bank, 4,194,304 - word x 8 - bit x 4 - bank, or 2,097,152 - word x 16 - bit x 4 - bank. These various organizations provide wide choice for different applications. It is designed with the state-o...
Description CMOS Synchronous Dynamic RAM

File Size 937.82K  /  69 Page

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    VG36128161BT VG36128401BT VG36128801BT

VML[Vanguard International Semiconductor]
Part No. VG36128161BT VG36128401BT VG36128801BT
OCR Text 4 (word x bit x bank), respectively. VG36128401BT / VG36128801BT / VG36128161BT CMOS Synchronous Dynamic RAM The VG36128401B, VG361288...194,304 x 8 x 4 and 2,097,152 x The synchronous DRAMs achieved high-speed data transfer using the...
Description CMOS Synchronous Dynamic RAM

File Size 1,354.59K  /  68 Page

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