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  4.900v Datasheet PDF File

For 4.900v Found Datasheets File :: 1777    Search Time::1.985ms    
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    L6386D L6386 E-L6386D013TR

STMICROELECTRONICS[STMicroelectronics]
Part No. L6386D L6386 E-L6386D013TR
OCR Text ...ces. BOOTSTRAP DRIVER 14 VCC 4 UV DETECTION UV DETECTION Vboot H.V. R R HVG DRIVER 13 OUT VCC 12 LVG LVG DRIVER 9 PGND 8 VREF + 5 DIAG...900V (Human Body Model) PIN CONNECTION LIN SD HIN VCC DIAG CIN SGND 1 2 3 4 5 6 7 D97IN521A ...
Description 0.65 A HALF BRDG BASED MOSFET DRIVER, PDSO14
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

File Size 78.84K  /  10 Page

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    2SK3341-01

FUJI[Fuji Electric]
Part No. 2SK3341-01
OCR Text ...,Tch=25C ID [A] 12 10 8 6 4 VGS=4.5V 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 VDS [V] 5.0V ID[A] 6.0V 1 5.5V 0.1 0.01 0 1 2 3 4 5 6 7 8 VGS[V] Typical Transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C ...
Description N-CHANNEL SILICON POWER MOS-FET

File Size 103.64K  /  4 Page

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    STP3NB90 STP3NB90FP 6250

STMICROELECTRONICS[STMicroelectronics]
Part No. STP3NB90 STP3NB90FP 6250
OCR Text 4 - 3.5 A - TO-220/TO-220FP PowerMESHTM MOSFET TARGET DATA TYPE STP3NB90 STP3NB90FP s s s s s V DSS 900 V 900 V R DS(on) < 4.2 < 4.2 ID 3.5 A 3.5 A TYPICAL RDS(on) = 4 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ...
Description From old datasheet system
N - CHANNEL 900V - 4 ohm - 3.5 A - TO-220/TO-220FP PowerMESH MOSFET

File Size 85.65K  /  6 Page

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    2SC4960 2SC4960A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC4960 2SC4960A
OCR Text ....04A, IB2 = - 0.08A, VCC = 250V 4 1 3 1 800 900 6 3 1.5 1 V V MHz s s s min typ max 50 50 Unit A A V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on t...
Description Silicon NPN triple diffusion planar type(For power switching) 1 A, 900 V, NPN, Si, POWER TRANSISTOR

File Size 56.58K  /  3 Page

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    SANYO[Sanyo Semicon Device]
Part No. 2SK1458LS
OCR Text ...ckage facilitating mounting. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 123 2.4 0.7 Specifications Abso...900V, VGS=0 VGS=30V, VDS=0 VDS=10V, ID=1mA VDS=20V, ID=0.1A Ratings min 900 1.0 100 2.0 0.08 0.15 3....
Description N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 32.14K  /  4 Page

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    L6385D

STMicroelectronics
Part No. L6385D
OCR Text ...IVER LVG TO LOAD LIN 1 4 GND D97IN514B June 1999 1/9 L6385 ABSOLUTE MAXIMUM RATINGS Symbol Vout Vcc Vboot Vhvg V...900V (Human Body Model) PIN CONNECTION LIN HIN Vcc GND 1 2 3 4 D97IN517 8 7 6 5 Vboo...
Description HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

File Size 70.55K  /  9 Page

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    2SK2652 2SK2652-01

FUJI[Fuji Electric]
Part No. 2SK2652 2SK2652-01
OCR Text ...ch =25C Min. 900 3,5 Typ. 4,0 10 0,2 10 1,87 4 900 130 70 25 80 70 40 1,0 850 8,5 Max. 4,5 500 1,0 100 2,5 6 Unit V V A mA nA...900V 2,5 2SK2652-01 FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(Tch...
Description N-channel MOS-FET

File Size 312.06K  /  2 Page

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    2SK2663

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SK2663
OCR Text ...te Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2663 10 Safe Operating Area 1 Drain Current ID [A] 100s 200s 0.1 R DS(ON) limit 1ms 10ms 0.01 DC ...
Description HVX-2 Series Power MOSFET(900V 1A)

File Size 413.90K  /  12 Page

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    2SK2664

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SK2664
OCR Text ... Avalanche Energy EAR Tch= 25*Z 4.8 Mounting Torque * iRecommended torque * 0.3 Nm *j 0.5 F TOR Units *Z V A W A mJ Nm Copyright & Cop...900V, VGS = 0V VGS = 30V, VDS = 0V ID = 1.5A, VDS = 10V ID =1.5A, VGS = 10V ID = 1mA, VDS = 10V IS =...
Description HVX-2 Series Power MOSFET(900V 3A)

File Size 414.88K  /  12 Page

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For 4.900v Found Datasheets File :: 1777    Search Time::1.985ms    
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