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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH4V64AWXJ-5 MH4V64AWXJ-6 MH4V64AWXJ
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| OCR Text |
...AST PAGE MODE 268435456 - BIT ( 4194304 - WORD BY 64 - BIT ) DYNAMIC RAM PIN CONFIGURATION
DESCRIPTION
The MH4V64AWXJ is 4194304-word x 64-bit dynamic ram module. This consist of four industry standard 4M x 16 dynamic RAMs in SOJ and on... |
| Description |
From old datasheet system
FAST PAGE MODE 268435456 - BIT ( 4194304 - WORD BY 64 - BIT ) DYNAMIC RAM
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| File Size |
169.43K /
20 Page |
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Mitsubishi Electric Corporation
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| Part No. |
M5M5408BTP M5M5408BRT M5M5408BFP M5M5408BFP-55LI
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| OCR Text |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5408B is a family of 4-Mbit static RAMs organized as 524,288-words by 8-bit, fabricated by Mitsubishi's highperformance 0.25m CMOS technology. The M5M5408B is suitabl... |
| Description |
524288-word by 8-bit CMOS static RAM, 55ns
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
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| File Size |
51.97K /
10 Page |
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TOSHIBA
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| Part No. |
TC58FVM6T2A TC58FVM6B2A
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| OCR Text |
...as 8388608 words x 8 bits or as 4194304 words x 16 bits. The TC58FVM6T2A/B2A features commands for Read, Program and Erase operations to all...Word Modes * * Block erase architecture 8 x 8 Kbytes/127 x 64 Kbytes Boot block architecture TC58FVM... |
| Description |
Flash - NOR
8Mx8 / 4Mx16 ; TSOP-I-48,TFBGA ;; Speed = 65ns/25ns Page ;; VCC = 2.7-3.6 ;; Read Icc Max (mA) = 55 ;; Standby Icc Max (uA) = 10 ;; Boot Block = Top ;;
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| File Size |
716.25K /
61 Page |
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| Part No. |
56E436
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| OCR Text |
4194304-word x 36-bit High Density Dynamic RAM Module
ADE-203-673 (Z) Preliminary Rev. 0.0 Oct. 18, 1996 Description
The HB56E836 Series is a 8 M x 36 Dynamic RAM Module, mounted 16 pieces of 16-Mbit DRAM (HM5117405) sealed in SOJ packa... |
| Description |
From old datasheet system
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| File Size |
207.65K /
24 Page |
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| Part No. |
A99001
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| OCR Text |
...8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz, and are sui... |
| Description |
From old datasheet system
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| File Size |
229.46K /
32 Page |
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| Part No. |
A99005
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| OCR Text |
...8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V56S20/30/40TP achieve very high speed data rate up to 100MHz (-7/-8) , 13... |
| Description |
From old datasheet system
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| File Size |
374.33K /
49 Page |
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| Part No. |
B98034
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| OCR Text |
...64BLG -7,-8,-10
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
DESCRIPTION
The MH4S64BLG is 4194304 - word by 64-bit Synchronous DRAM module. This consists of four industry standard 4Mx16 Synchronous DRAMs in TSOP and one indu... |
| Description |
From old datasheet system
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| File Size |
575.21K /
53 Page |
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| Part No. |
D98017_A
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| OCR Text |
...limits are subject to change
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
Those are summarized in the part name table below.
FEATURES
Single +2.7~+3.6V power supply Small stand-by current: 0.3A(3V,ty p.) No clocks, No ref res... |
| Description |
From old datasheet system
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| File Size |
104.92K /
10 Page |
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it Online |
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