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50v v Datasheet PDF File

For 50v v Found Datasheets File :: 29566 Search Time::2.797ms
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				IRF[International Rectifier]
Part No.	IRF1310NL IRF1310NS
OCR Text	...v, See Fig. 6 and 13 --- vDD = 50v --- ID = 22A ns --- RG = 3.6 --- RD = 2.9, See Fig. 10 Between lead, --- nH and center of die contact -...v SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body D...
Description	Power MOSFET(vdss=100v, Rds(on)=0.036ohm, Id=42A)
File Size	152.94K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PH40UPBF
OCR Text	...WIDTH GE 1 10 1 1 v = 50v 5s PULSE WIDTH CC 5 6 7 8 9 10 vCE , Collector-to-Emitter voltage (v) vGE , Gate-to-Emitter voltage (v) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics w...
Description	Ultra Fast Speed IGBT
File Size	611.92K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310S
OCR Text	...DS = vGS, ID = 250A --- S vDS = 50v, ID = 25A 25 vDS = 100v, vGS = 0v A 250 vDS = 80v, vGS = 0v, TJ = 150C 100 vGS = 20v nA -100 vGS = -20v ...v ns C Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 2...
Description	Power MOSFET(vdss=100v, Rds(on)=0.04ohm, Id=41A)
File Size	319.11K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TLP220007
OCR Text	... tpLZ CMH 3 CML IF = 0mA, vCM = 50v, Ta = 25C 1000 v / s IF = 1.6mA, vCM = 50v, Ta = 25C -1000 ns ns v / s tpHL 1 Symbol Test Cir- cuit Test Condition Without peaking capacitor C1 With peaking capacitor C1 Without peaking capaci...
Description	High Speed Line Receiver
File Size	188.87K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLR120NPBF IRLR/U120NPBF
OCR Text	...ig. 6 and 13 --- 4.0 --- vDD = 50v --- 35 --- ID = 6.0A ns --- 23 --- RG = 11, vGS = 5.0v --- 22 --- RD = 8.2, See Fig. 10 Between lead, ...v TJ = 25C, IS = 6.0A, vGS = 0v --- 110 160 ns TJ = 25C, IF =6.0A --- 410 620 nC di/dt = 100A/s In...
Description	Surface Mount (IRLR120N) HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
File Size	291.64K / 11 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	... Operating Temperature Qgd vDS 50v, ID = 4.1A, (Figure 12) vDD = 125v, ID 8.1A, RG = 12, RL = 1.1 vGS = 10v, (Figures 17, 18) MOSFET Switc...v ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limite...
Description	8.1A and 6.5A/ 275v and 250v/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275v and 250v, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 v, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXZ12210N50L
OCR Text	... vHF COMMUNICATIONS Gps vDD= 50v, Pout=200W, f=175MHz min. typ. TBD max. db 60 TBD % Drain Efficiency vDD= 50v, Pout=200W, f=175MHz Load Mismatch vDD= 150v, Pout=300W, f=175MHz TBD 3T MRI Gps(1) vDD=120v, POUT=475W, F=...
Description	RF Power MOSFET
File Size	300.64K / 4 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...t of Operating Temperature vDS 50v, ID = 8A, (Figure 12) vDD = 125v, ID 14A, RG = 9.1, RL = 8.9 (Figures 17, 18) MOSFET Switching Times ar...v ns C - 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limi...
Description	14A and 13A, 275v and 250v, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275v and 250v/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	RN460607
OCR Text	... Test Condition vCB = -50v, IE = 0 vCE = -50v, IB = 0 vEB = -5v, IC = 0 vCE = -5v, IC = -10mA IC = -5mA, IB = -0.25mA vCE = -0.2v, ...v v v MHz pF Q2 Electrical Characteristics (Ta = 25C) Characteristic Collector cut-off current E...
Description	Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
File Size	244.08K / 5 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	RN460407 RN4604
OCR Text	... Test Condition vCB = -50v, IE = 0 vCE = -50v, IB = 0 vEB = -10v, IC = 0 vCE = -5v, IC = -10mA IC = -5mA, IB = -0.25mA vCE = -0.2v,...v v v MHz pF Q2 Electrical Characteristics (Ta = 25C) Characteristic Collector cut-off current E...
Description	Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
File Size	245.25K / 5 Page	View it Online	Download Datasheet

For 50v v Found Datasheets File :: 29566 Search Time::2.797ms
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