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  69.632 Datasheet PDF File

For 69.632 Found Datasheets File :: 978    Search Time::3.297ms    
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    APT10086BLC APT10086SLC

Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT10086BLC APT10086SLC
OCR Text ...e Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610)...
Description POWER MOS VI 1000V 13A 0.860 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

File Size 34.77K  /  2 Page

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    APT10090BFLL APT10090SFLL

Advanced Power Technology
Part No. APT10090BFLL APT10090SFLL
OCR Text ...e Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610)...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.43K  /  2 Page

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    APT10090BLL APT10090SLL

ADPOW[Advanced Power Technology]
Part No. APT10090BLL APT10090SLL
OCR Text ...e Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610)...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.98K  /  2 Page

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    BC161-10 BC161-16 BC160 BC160-10 BC160-16 BC161

PHILIPS[Philips Semiconductors]
Philipss
NXP Semiconductors N.V.
Part No. BC161-10 BC161-16 BC160 BC160-10 BC160-16 BC161
OCR Text ... 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 1777...632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, ...
Description PNP medium power transistors 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39

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    BZA100 BZA100_2

PHILIPS[Philips Semiconductors]
Part No. BZA100 BZA100_2
OCR Text ... 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 1777...632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, ...
Description 18-fold ESD transient voltage suppressor
From old datasheet system

File Size 60.42K  /  8 Page

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    LT1271 LT1271CQ LT1271CT LT1269 LT1269CQ LT1269CS LT1269CT 127169FB

LINER[Linear Technology]
Part No. LT1271 LT1271CQ LT1271CT LT1269 LT1269CQ LT1269CS LT1269CT 127169FB
OCR Text ...UT VOLTAGE (V) 25 30 10 0 1271/69 TA02 U UO BUCK MODE OUTPUT POWER (3.5A)(VOUT) TRANSFORMER TURNS RATIO MUST BE OPTIMUM TO AC...632 -0.508 ) Q(DD5) 0396 5 LT1271/LT1269 PACKAGE DESCRIPTIO U Dimensions in inches (mi...
Description From old datasheet system
4A High Efficiency Switching Regulators

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    PDTA114EK PDTA114

PHILIPS[Philips Semiconductors]
Part No. PDTA114EK PDTA114
OCR Text ... 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 1777...632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, ...
Description PNP resistor-equipped transistor

File Size 66.84K  /  8 Page

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    PDTA114TS

PHILIPS[Philips Semiconductors]
Part No. PDTA114TS
OCR Text ... 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 1777...632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, ...
Description PNP resistor-equipped transistor

File Size 62.26K  /  8 Page

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    PTF10021

Ericsson Microelectronics
Part No. PTF10021
OCR Text ...2 92.8 90.5 86.2 81.9 77.9 74.6 69.1 61.2 51.9 27.0 -12.0 -57.1 -146.3 113.0 88.8 74.8 60.6 49.6 50.1 Mag 4.529 3.199 0.825 0.325 0.108 ...632 0.259 0.472 0.817 0.853 0.855 0.859 0.861 0.860 0.877 Ang -162. -166. -172. -176. -179. 177....
Description 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦,1.4-1.6 GHzGOLDMOS场效应晶体管
30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor

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    UPA800T UPA800T-T1 UPA800T-KB

NEC[NEC]
Part No. UPA800T UPA800T-T1 UPA800T-KB
OCR Text ... -36.9 -44.7 -50.6 -57.1 -62.9 -69.3 -74.1 -79.8 -85.2 -90.6 -95.8 -100.6 -106.3 -111.8 -116.4 -121.2 MAG 3.505 3.400 3.368 3.219 3.186 3.046 2.905 2.830 2.694 2.597 2.479 2.392 2.302 2.207 2.110 2.034 1.989 1.903 1.854 1.779 S21 ANG 172.1 ...
Description 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

File Size 47.29K  /  6 Page

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