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  70ns Datasheet PDF File

For 70ns Found Datasheets File :: 117+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 |   

    A62S8316 A62S8316G-70S A62S8316G-70SI A62S8316V-70S A62S8316V-70SI A62S8316-70SI

AMIC Technology Corporation
AMICC[AMIC Technology]
Part No. A62S8316 A62S8316G-70S A62S8316G-70SI A62S8316V-70S A62S8316V-70SI A62S8316-70SI
Description    256K X 16 BIT LOW VOLTAGE CMOS SRAM
70ns; 50mA 256K x 16bit low voltage CMOS SRAM

File Size 141.06K  /  15 Page

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    HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
Part No. HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
Description Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power

File Size 105.82K  /  12 Page

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    AMICC[AMIC Technology]
AMIC Technology Corporation
AMIC Technology, Corp.
Part No. A23L1616 A23L16161 A23L16161V A23L16162 A23L16162V A23L1616M- A23L1616V-100 A23L1616R-70 A23L1616R-100 A23L1616M-70 A23L1616M-100 A23L16162V-70 A23L16162V-100 A23L16161V-100 A23L16161V-70 A23L1616V-70 A23L16161SERIES A23L16162SERIES A23L1616SERIES A23L16162R-100 A23L16162R-70
Description 70ns 2M x 16/4M x 8bit CMOS MASK ROM
100ns 2M x 16/4M x 8bit CMOS MASK ROM
Power Resistor; Series:MK; Resistance:20ohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C; Terminal Type:Radial Leaded
2M X 16 / 4M X 8 BIT CMOS MASK ROM 200万16 / 4米8位CMOS掩膜ROM

File Size 123.04K  /  11 Page

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    IC62C256 IC62C256-45T IC62C256-45TI IC62C256-45U IC62C256-45UI IC62C256-70T IC62C256-70TI IC62C256-70U IC62C256-70UI

Integrated Circuit Solution...
ICSI[Integrated Circuit Solution Inc]
Part No. IC62C256 IC62C256-45T IC62C256-45TI IC62C256-45U IC62C256-45UI IC62C256-70T IC62C256-70TI IC62C256-70U IC62C256-70UI
Description 70ns; 5V; 32K x 8 low power CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
45ns; 5V; 32K x 8 low power CMOS static RAM

File Size 121.16K  /  10 Page

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    ICSI[Integrated Circuit Solution Inc]
Part No. IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV12816L-70BI IC62VV12816L-70T IC62VV12816L-70TI IC62VV12816LL-70TI IC62VV12816L-100B IC62VV12816L-100BI IC62VV12816L-100T IC62VV12816L-100TI IC62VV12816LL-100B IC62VV12816LL-100BI IC62VV12816LL-100T IC62VV12816LL-100TI IC62VV12816LL-70B IC62VV12816LL-70BI IC62VV12816LL-70T
Description ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM
70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM

File Size 252.63K  /  11 Page

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    Samsung Electronic
Part No. KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL-6 KM416C254DJL-7 KM416V254DJL-5 KM416V254DJL-6 KM416V254DJL-7
Description 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh

File Size 839.35K  /  36 Page

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    Integrated Circuit Solu...
Fuji Electric Holdings Co., Ltd.
ICSI[Integrated Circuit Solution Inc]
Part No. IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62VV25616L-100B IC62VV25616L-100BI IC62VV25616L-100T IC62VV25616L-100TI IC62VV25616L-55B IC62VV25616L-55BI IC62VV25616L-55T IC62VV25616L-55TI IC62VV25616L-70B IC62VV25616L-70BI IC62VV25616L-70T IC62VV25616L-70TI IC62VV25616LL-100B IC62VV25616LL-100BI IC62VV25616LL-100T IC62VV25616LL-100TI IC62VV25616LL-55B IC62VV25616LL-55BI IC62VV25616LL-55T IC62VV25616LL-55TI IC62VV25616LL-70B IC62VV25616LL-70BI IC62VV25616LL-70T
Description OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM

File Size 231.10K  /  11 Page

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    Alliance Semiconductor
Part No. AS4C14400-70JC AS4C14405-60JC AS4C14405-50TC AS4C14405-70JC AS4C14405-70TC AS4C14405-60TC AS4C14405-50JC AS4C14405-40TC AS4C14405-40JC AS4C14400-70TC AS4C14400-60TC AS4C14400-50TC AS4C14400-50JC AS4C14400-40TC AS4C14400-40JC
Description 1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 40ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 40ns

File Size 609.62K  /  16 Page

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    Samsung Electronic
Part No. KM416C256DLJ-7 KM416V256DLJ-5 KM416C256DLJ-5 KM416C256DLJ-6 KM416V256DLJ-6 KM416V256DLJ-7
Description 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability

File Size 83.25K  /  8 Page

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    HM514260DLJI-7 HM514260DLJI-8

Hitachi Semiconductor
Part No. HM514260DLJI-7 HM514260DLJI-8
Description 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory

File Size 1,084.58K  /  24 Page

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