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  8-bit 524 288 Datasheet PDF File

For 8-bit 524 288 Found Datasheets File :: 1681    Search Time::1.328ms    
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    V29C31004B V29C31004T

Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Part No. V29C31004B V29C31004T
OCR Text 8 BIT) 3.3 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 512Kx8-bit Organization Address Access Time: 90, 120 ns Single 3.3V 0.3 Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per...
Description 4 MEGABIT 524,288 x 8 BIT 3.3 VOLT CMOS FLASH MEMORY
4 MEGABIT 524/288 x 8 BIT 3.3 VOLT CMOS FLASH MEMORY

File Size 66.98K  /  15 Page

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    V29C51004B V29C51004T V29C51004T-70J V29C51004T-70T V29C51004T-90T V29C51004B-70J V29C51004B-70T

Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Part No. V29C51004B V29C51004T V29C51004T-70J V29C51004T-70T V29C51004T-90T V29C51004B-70J V29C51004B-70T
OCR Text 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 512Kx8-bit Organization Address Access Time: 70, 90 ns Single 5V 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per Sect...
Description x8 Flash EEPROM x8闪存EEPROM
4 MEGABIT 524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY

File Size 66.57K  /  15 Page

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    V29C51400B V29C51400T

Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Part No. V29C51400B V29C51400T
OCR Text 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 256K x 16-bit or 512K x 8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (loc...
Description 4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY

File Size 68.28K  /  16 Page

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    V54C316162VC-6 V54C316162VC V54C316162VC-5 V54C316162VC-55 V54C316162VC-7

Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Part No. V54C316162VC-6 V54C316162VC V54C316162VC-5 V54C316162VC-55 V54C316162VC-7
OCR Text ...rammable Burst Length: 1, 2, 4, 8 and Full Page for Sequential and 1, 2, 4, 8 for Interleave s UDQM & LDQM for byte masking s Auto & Self Re...Bit Test Mode A8 0 A7 0 Mode Mode Reg Set Burst Type A3 0 1 Type Sequential Interleave CA...
Description 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16

File Size 154.41K  /  22 Page

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    VG3617161BT VG3617161BT-55 VG3617161BT-6 VG3617161BT-7 VG3617161BT-8

ETC[ETC]
Part No. VG3617161BT VG3617161BT-55 VG3617161BT-6 VG3617161BT-7 VG3617161BT-8
OCR Text ...rogrammable burst length (1,2,4,8,& Full page) * Programmable wrap sequence (Sequential/Interleave) * Automatic precharge and controlled precharge * Auto refresh and self refresh modes * Dual internal banks controlled by A11(Bank select) * ...
Description 16Mb CMOS Synchronous Dynamic RAM

File Size 1,592.73K  /  69 Page

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    VG3617161DT VG3617161DT-10 VG3617161DT-6 VG3617161DT-7 VG3617161DT-8

VML[Vanguard International Semiconductor]
Part No. VG3617161DT VG3617161DT-10 VG3617161DT-6 VG3617161DT-7 VG3617161DT-8
OCR Text ...rogrammable burst length (1,2,4,8,& Full page) * Programmable wrap sequence (Sequential/Interleave) * Automatic precharge and controlled precharge * Auto refresh and self refresh modes * Dual internal banks controlled by A11(Bank select) * ...
Description 16Mb CMOS Synchronous Dynamic RAM

File Size 940.00K  /  70 Page

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    VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161ET-8

VML[Vanguard International Semiconductor]
Part No. VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161ET-8
OCR Text ...rogrammable burst length (1,2,4,8,& Full page) * Programmable wrap sequence (Sequential/Interleave) * Automatic precharge and controlled pre...Bit CMOS Synchronous Dynamic RAM 50-Pin Plastic TSOP(II)(400 mil) VDD DQ0 DQ1 1 2 3 4 5 6 7 ...
Description CMOS Synchronous Dynamic RAM

File Size 1,124.02K  /  69 Page

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    A29L004TL-90 A29L004L A29L004TV-90 A29L004X A29L004 A29L004TL-70 A29L004TV-70 A29L004TW-70 A29L004TW-90 A29L004TX-70 A29

AMICC[AMIC Technology]
Part No. A29L004TL-90 A29L004L A29L004TV-90 A29L004X A29L004 A29L004TL-70 A29L004TV-70 A29L004TW-70 A29L004TW-90 A29L004TX-70 A29L004TX-90 A29L004UL-70 A29L004UL-90 A29L004UV-70 A29L004UV-90 A29L004UW-70 A29L004UW-90 A29L004UX-70 A29L004UX-90 A29L004V A29L004W
OCR Text 8 Bit CMOS 3.0 Volt-only, Preliminary Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications - Regulated voltage range: 3.0 to 3.6 volt read and write oper...
Description 512K X 8 Bit CMOS 3.0 Volt-only/ Boot Sector Flash Memory
512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
512K X 8 Bit CMOS 3.0 Volt-only Boot Sector Flash Memory

File Size 367.91K  /  39 Page

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    K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-TC60 K4S643232C-TC80 K4S643232C-TL10 K4S643232C-TL60 K4S643232C-TL80 K4S643232C-TC_L10 K4S643232C-TC_L55 K4S643232C-TC_L60 K4S643232C-TC_L70 K4S643232C-TC_L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80
OCR Text ... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us re...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

File Size 1,151.85K  /  43 Page

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    K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
OCR Text ... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us re...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet

File Size 100.95K  /  12 Page

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