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amperes -3 Datasheet PDF File

For amperes -3 Found Datasheets File :: 18529 Search Time::13.297ms
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				ADPOW[Advanced Power Technology]
Part No.	APT5025BN APT5030BN
OCR Text	... 20 VGS=10V ID, DRAIN CURRENT (amperes) ID, DRAIN CURRENT (amperes) 16 6V 8 10 VGS=10V 6V 5.5V 12 5.5V 8 5V 4 4.5V 4V 0 50 100 150 200 2...3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-T...
Description	POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	51.13K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5026HVR
OCR Text	...T5026HVR 50 ID, DRAIN CURRENT (amperes) VGS=7V, 10V & 15V 6V ID, DRAIN CURRENT (amperes) 50 40 40 VGS=15V VGS=7V & 10V 5.5V 6V ...3, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 50 ID, DRAIN CURREN...
Description	POWER MOS V 500V 18.5A 0.260 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.64K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5028BVR
OCR Text	...T5028BVR 40 ID, DRAIN CURRENT (amperes) VGS=6V, 10V & 15V 5.5V 30 ID, DRAIN CURRENT (amperes) 40 VGS=15V VGS=10V 30 6V 5.5V 20 5V ...3, TYPICAL OUTPUT CHARACTERISTICS 1.8 V GS 0 0 NORMALIZED TO = 10V @ 0.5 I [Cont.] D ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 20A 0.280 Ohm
File Size	61.82K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5028SVR
OCR Text	...T5028SVR 40 ID, DRAIN CURRENT (amperes) VGS=6V, 10V & 15V 5.5V 30 ID, DRAIN CURRENT (amperes) 40 VGS=15V VGS=10V 30 6V 5.5V 20 5V ...3, TYPICAL OUTPUT CHARACTERISTICS 1.8 V GS 0 0 NORMALIZED TO = 10V @ 0.5 I [Cont.] D ...
Description	POWER MOS V 500V 20A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	64.83K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5030AVR
OCR Text	...T5030AVR 40 ID, DRAIN CURRENT (amperes) VGS=6V, 10V & 15V 5.5V 30 ID, DRAIN CURRENT (amperes) 40 VGS=15V VGS=10V 30 6V 5.5V 20 5V ...3, TYPICAL OUTPUT CHARACTERISTICS 1.8 V GS 0 0 NORMALIZED TO = 10V @ 0.5 I [Cont.] D ...
Description	POWER MOS V 500V 14.7A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.48K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5032CVR
OCR Text	...T5032CVR 40 ID, DRAIN CURRENT (amperes) VGS=6V, 10V & 15V 5.5V 30 ID, DRAIN CURRENT (amperes) 40 VGS=15V VGS=10V 30 6V 5.5V 20 5V ...3, TYPICAL OUTPUT CHARACTERISTICS 1.8 V GS 0 0 NORMALIZED TO = 10V @ 0.5 I [Cont.] D ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 14A 0.320 Ohm
File Size	60.85K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5040CNR
OCR Text	...40CNR 20 I D , DRAIN CURRENT (amperes) I D , DRAIN CURRENT (amperes) 10 VGS=10V 8 6V 6 5.5V 16 12 VGS=6V 8 5.5V 4 5V 4.5V 0 4V 4 5V 2 4.5V 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS...
Description	POWER MOS IV 500V 13.0A 0.400 Ohm N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	52.43K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT50GF60B2RD APT50GF60LRD
OCR Text	... = 350V IF, FORWARD CURRENT (amperes) 160 TJ = 150C TJ = 100C 80 TJ = 25C TJ = -55C 40 2000 120A 1500 60A 120 1000 500 30A...3, Reverse Recovery Current vs Current Slew Rate 200 TJ = 100C VR = 350V IN 0.4 0.0 -25 0 25...
Description	Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
File Size	112.47K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF60BR
OCR Text	...BR 100 IC, COLLECTOR CURRENT (amperes) IC, COLLECTOR CURRENT (amperes) 100 VGE=13, 15 & 17V VGE=13, 15 & 17V 80 11V 60 10V 40 9V 20 8V ...3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics VGE, GAT...
Description	Fast IGBT 600V 75A The Fast IGBT is a new generation of high voltage power IGBTs.
File Size	80.83K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JVFR
OCR Text	...V, 10V & 15V ID, DRAIN CURRENT (amperes) ID, DRAIN CURRENT (amperes) 200 6.5V 200 250 VGS=15V VGS=10V VGS=7V 6.5V 150 6V 150 6V ...3, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 250 ID, DRAIN CURRE...
Description	POWER MOS V 500V 77A 0.050 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.13K / 4 Page	View it Online	Download Datasheet

For amperes -3 Found Datasheets File :: 18529 Search Time::13.297ms
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