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Littelfuse, Inc.
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Part No. |
SPHV15-01ETG-C
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OCR Text |
...age v rwm i r 1a 12.0 v reverse breakdown voltage v br i r =1ma 13.3 v leakage current i leak v r =12v 1. 0 a clamp voltage 1 v c i pp =1a, t p =8/20s, fwd 19.0 v i pp =8a, t p =8/20s, fwd 25.0 v dynamic resistance 2 r dyn tlp, t p =100ns, ... |
Description |
SPHV-C Series 200W Discrete Bidirectional TVS Diode
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File Size |
803.77K /
6 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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Part No. |
BCX69-10 BCX69-16
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OCR Text |
... typ max unit collector-emitter breakdown voltage v (br)ceo i c =30ma,i b =0 20 v collector-base breakdown voltage v (br)cbo i c =10a,i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =1a,i c =0 5 v v cb =25v,i e = 0 100 na v cb =25v... |
Description |
For general AF applications. High collector current. High current gain.
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File Size |
133.04K /
2 Page |
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it Online |
Download Datasheet |
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TY Semicondutor
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Part No. |
2SJ181S
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OCR Text |
... low drive current no secondary breakdown suitable for switching regulator and dc-dc converter absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss -600 v gate to source voltage v gss 15 v drain curren... |
Description |
P-Channel MOSFET
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File Size |
176.67K /
2 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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Part No. |
TPC6130
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OCR Text |
...in cut-off current drain-source breakdown voltage drain-source breakdown voltage gate threshold voltage drain-source on-resistance (note 5) symbol i gss i dss v (br)dss v (br)dsx v th r ds(on) test condition v gs = 12 v, v ds = 0 v v d... |
Description |
Power MOSFET (P-ch single)
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File Size |
221.81K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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