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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2Sa2058
OCR Text ...obe applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.2 a) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics...
Description TOSHIBa Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2Sa2059
OCR Text ...obe applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.5 a) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics...
Description SILICON PNP EPITaXIaL TYPE

File Size 181.01K  /  5 Page

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2Sa2061
OCR Text ...obe applications * * * High DC current gain: hFE = 200 to 500 (IC = 0.5 a) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics ...
Description Silicon PNP Epitaxial Type

File Size 167.29K  /  5 Page

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2Sa2062 2SC5774
OCR Text ...0W Output applications Large current capacitance. Wide aSO and high durability against breakdown. adoption of MBIT process. Specificat...a a W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff current Emitter Cuto...
Description 140V / 10a, aF70W Output applications

File Size 34.06K  /  4 Page

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2Sa2064
OCR Text ...age VCE(sat) * Superior forward current transfer ratio hFE linearity * TO-220D built-in: Excellent package with withstand voltage 5 kV guara...a a W 1 2 2.540.30 5.080.50 3 1: Base 2: Collector 3: Emitter TO-220D-a1 Package Internal ...
Description Silicon PNP epitaxial planar type

File Size 70.35K  /  3 Page

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2Sa2067
OCR Text ...age VCE(sat) * Superior forward current transfer ratio hFE linearity * allowing automatic insertion eith radial taping 2.50.1 Feature...a a W 1 : Base 2 : Collector 3 : Emitter MT-4-a1 Package Internal Connection C B E Electr...
Description Silicon PNP epitaxial planar type

File Size 66.39K  /  3 Page

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2Sa2069
OCR Text ...ter applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.15 a) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) High-speed switching: tf = 37 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristic...
Description High-Speed Switching applications DC-DC Converter applications

File Size 194.91K  /  5 Page

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2Sa2070
OCR Text ...ter applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.1 a) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics...
Description TOSHIBa Transistor Silicon PNP Epitaxial Type

File Size 131.46K  /  5 Page

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    2SA2071

ROHM[Rohm]
Part No. 2Sa2071
OCR Text ... Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC ...a a 1 mW W 2 C C 1 Pw=100ms 2 Mounted on a 40x40x0.7 (mm) ceramic substrate 1.5 1.6 4.5 ...
Description Power transistor (-60V, -3a)
Power transistor (−60V −3a)
Power transistor (−60V, −3a)

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    2SA2084

PANASONIC[Panasonic Semiconductor]
Part No. 2Sa2084
OCR Text ...tage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol V...a, IB = 0 IE = -1 a, , IC = 0 VCE = -10 V, IC = -5 ma IC = -10 ma, IB = -1 ma VCB = -10 V, IE = 0, f...
Description Silicon PNP epitaxial planar type

File Size 67.26K  /  3 Page

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