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77N21 60B224C 36N50DA ON1466 M55342 MODEL302 77N21 T494C336
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For dvanced Found Datasheets File :: 671    Search Time::4.563ms    
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    Advanced Power Electronics, Corp.
Part No. AP9952GP-HF
OCR Text ...free product -55 to 150 g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220 package is widely preferred for...
Description 68 A, 70 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN

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    Advanced Power Electronics, Corp.
Part No. AP18N20GJ AP18N20GH
OCR Text ...d s to-251(j) g d s to-252(h) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s the to-252 package is widely preferr...
Description 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 ROHS COMPLIANT PACKAGE-3
18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 ROHS COMPLIANT PACKAGE-3

File Size 96.66K  /  4 Page

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    Q-Tech, Corp.
Part No. QT18L3M-FREQ1 QT18L6M-FREQ1 QT18L5M-FREQ1 QT18L4M-FREQ2 QT18L12M-FREQ2 QT18L9M-FREQ2 QT18L5M-FREQ2 QT18L9M-FREQ1 QT18L11M-FREQ2 QT18L12M-FREQ1 QT18L3M-FREQ2 QT18L1M-FREQ2 QT18L1M-FREQ1 QT18L6M-FREQ2 QT18L10M-FREQ2 QT18L4M-FREQ1 QT18L10M-FREQ1 QT18LD10M-FREQ1 QT18LD10M-FREQ2
OCR Text ...z ttl cmos high speed cmos a dvanced cmos low voltage, 3.3 v 10 k ecl 10 kh ecl 100 k/300 k ecl +5 v ecl (pecl) special cmos* d = tristate output (add "d" as a suffix to the above listed options) electrical s p ecifications item...
Description CRYSTAL OSCILLATOR, CLOCK, 0.00000001 MHz - 9.999 MHz, LVHCMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 10 MHz - 160 MHz, LVHCMOS OUTPUT

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    AP18N20GI AP18N20GI-14

Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP18N20GI AP18N20GI-14
OCR Text ...8n20gi rohs-compliant product a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s the to-220cfm isolation package is w...
Description 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB ROHS COMPLIANT, TO-220CFM, 3 PIN
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

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    AP18N20GH-HF AP18N20GJ-HF AP18N20GH-HF-14 AP18N20GJ-HF-14

Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP18N20GH-HF AP18N20GJ-HF AP18N20GH-HF-14 AP18N20GJ-HF-14
OCR Text ...d s to-251(j) g d s to-252(h) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s the to-252 package is widely preferr...
Description 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 96.83K  /  4 Page

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    Amphenol, Corp.
Part No. ACSP-2518PZC15R-RC
OCR Text ...@advanced-control.com www.a dvanced-control.com frequency range (min) 7.9 ? 8.4 ghz flatness vs. frequency (max) 0.1 db typical tss -45 dbm internal attenuation 6 db sensitivity (min) 500 mv/mw notes: maximum ...
Description 7900 MHz - 8400 MHz RF/MICROWAVE THRESHOLD DETECTOR, 23 dBm INPUT POWER-MAX ROHS COMPLIANT, CASE C15

File Size 27.70K  /  1 Page

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    AiT Semiconductor
Part No. AM2305
OCR Text ...ed using high cell density. a dvanced trench technology to provide excellent r ds(on) . this high density process is especially tailored to minimi ze on - state resistance. these devices are particularly suited for low voltage ...
Description MOSFET -30V P-CHANNEL ENHANCEMENT MODE

File Size 522.52K  /  8 Page

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    http://
Part No. AP4511GD
OCR Text ...1 d1 d2 d2 s1 g1 s2 g2 pdip-8 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 200805262 n-ch electrical characte...
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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