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For gaas- Found Datasheets File :: 15531 Search Time::4.547ms
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				Toshiba Semiconductor
Part No.	TLP750
OCR Text	...s own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the produc...
Description	TOSHIBA Photocoupler GaA?As Ired Photo IC TOSHIBA Photocoupler GaAAs Ired Photo IC
File Size	187.05K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TLP751
OCR Text	...s own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the produc...
Description	GAAГAS IRED PHOTO IC GaAAs Ired Photo IC
File Size	554.56K / 8 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TLP797GA
OCR Text	...s own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the produc...
Description	TOSHIBA PHOTOCOUPLER PHOTO RELAY
File Size	70.38K / 5 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TLP801A TLP801AF
OCR Text	...nder any law and regulations. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. 9 2004-02-12
Description	INFRARED LED PHOTOTRANSISTOR
File Size	244.93K / 9 Page	View it Online	Download Datasheet

				Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TLP921
OCR Text	...lective photosensor combining a GaAs infrared LED with a Si phototransistor. * * * * * Flush-mount package on PCB: Applied PCB thickness = 1.6 mm or thinner Positioning pin and single-sided screw-mount type Short lead type: Lead length = 2....
Description	Toshiba Photoreflective sensor Infrared LED Phototransistor Inkjet printers ink-level monitoring 东芝Photoreflective传感器的红外发光二极管光电晶体管喷墨打印机墨水一级的监测
File Size	171.20K / 8 Page	View it Online	Download Datasheet

				Alpha Industries Inc Skyworks Solutions Inc.
Part No.	AS179-92
OCR Text	GaAs IC SPDT Switch DC-3 GHz AS179-92 Features s P1 dB +30 dBm Typical @ +3 V s IP3 43 dBm Typical @ +3 V s Low Insertion Loss (0.3 dB @ 0.9 GHz) s Low DC Power Consumption s Ultra Miniature SC-70 6 Lead Package s PHEMT Process SC-70 6...
Description	PHEMT GaAs IC SPDT Switch DC GHz PHEMT GaAs IC SPDT Switch DC-3 GHz
File Size	22.94K / 2 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
Part No.	HLMP-1601 HLMP-1620 HLMP-1600 HLMP-3601 HLMP-3650 HLMP-3600 HLMP-3651 HLMP-1621 HLMP-1640 HLMP-1641 HLMP-3680 HLMP-3681
OCR Text	...d LEDs are made from GaAsP on a GaAs substrate. The High Efficiency Red and Yellow devices use GaAsP on a GaP substrate. The green devices use GaP on a GaP substrate. The diffused lamps provide a wide off-axis viewing angle. The T-13/4 lamp...
Description	T-13/4 (5 mm)/ T-1 (3 mm)/ 5 Volt/ 12 Volt/ Integrated Resistor LED Lamps T-13/4 (5 mm), T-1 (3 mm), 5 Volt, 12 Volt, Integrated Resistor LED Lamps
File Size	137.95K / 5 Page	View it Online	Download Datasheet

				HITTITE[Hittite Microwave Corporation]
Part No.	HMC318MS8G
OCR Text	GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5.0 - 6.0 GHz Features LNA with 18 dB Gain Control +3V Operation Low Noise Figure: 2.5 dB No External Components Ultra Small 8 Lead MSOP: 14.8mm2 x 1mm High 8 AMPLIFIERS - SMT Typical Applica...
Description	GaAs MMIC LOW NOISE AMPLIFIER with AGC 5.0 - 6.0 GHz GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5.0 - 6.0 GHz
File Size	210.10K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFC5216 C5216A
OCR Text	...e. MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGFC5216 Q-Band 4-Stage Driver Amplifier DESCRIPTION The MGFC5216 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Middle Power Amplifier (MPA) . BLOCK DIAGRAM Vg1 ...
Description	Q-Band 4-Stage Driver Amplifier From old datasheet system
File Size	29.81K / 4 Page	View it Online	Download Datasheet

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