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  ge-avalanche Datasheet PDF File

For ge-avalanche Found Datasheets File :: 1565    Search Time::1.484ms    
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    IRL2203S

IRF[International Rectifier]
Part No. IRL2203S
OCR Text ...00 RD L IM ITED BY PAC KA GE VGS RG D.U.T. + 80 I D , D ra in C u rre n t (A m p s) -VDD 5.0V 60 Pulse Width 1 s ...Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulato...
Description Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A?)
Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A)

File Size 161.10K  /  9 Page

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    10BQ030 10BQ03002

International Rectifier
Part No. 10BQ030 10BQ03002
OCR Text ... 25 C 1 10 20 30 Reverse V olta ge - VR (V ) Fig. 2 - Typical Peak Reverse Current Vs. Reverse Voltage 1 0 00 Junc tion Ca pa citan ce - C T (p F) TJ = 25 C 10 0 0.1 0 0.2 0.4 0 .6 0 .8 Forw ard V oltage D rop - V FM (V ) ...
Description SCHOTTKY RECTIFIER 1 Amp

File Size 88.23K  /  6 Page

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    IRL3303L IRL3303S IRL3103L

IRF[International Rectifier]
Part No. IRL3303L IRL3303S IRL3103L
OCR Text ... G S , G ate-to -S ource V olta ge (V ) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized...Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same...
Description HEXFET? Power MOSFET
HEXFET Power MOSFET

File Size 154.16K  /  10 Page

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    IRL3303 IRL3303PBF

IRF[International Rectifier]
Part No. IRL3303 IRL3303PBF
OCR Text ... G S , G ate-to -S ource V olta ge (V ) T J , Junction T emperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized O...Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulat...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET

File Size 99.40K  /  8 Page

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    STPS20L15G STPS20L15D

International Rectifier
Part No. STPS20L15G STPS20L15D
OCR Text ... 1 .2 1.4 1 .6 Forw a rd V olta ge D rop - V FM (V ) 100 0 5 10 15 20 Reverse V olta ge - VR (V ) Fig. 1 - Maximum Forward Voltage Drop Characteristics 10 Th erm a l Im pedance Z thJC ( C /W ) Fig. 3 - Typical Junction Capacitance...
Description SCHOTTKY RECTIFIER

File Size 166.69K  /  6 Page

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    STPS20L15TS STPS20L15T

International Rectifier
Part No. STPS20L15TS STPS20L15T
OCR Text ... 1 .2 1.4 1 .6 Forw a rd V olta ge D rop - V FM (V ) 100 0 5 10 15 20 Reverse V olta ge - VR (V ) Fig. 1 - Maximum Forward Voltage Drop Characteristics 10 Th erm a l Im pedance Z thJC ( C /W ) Fig. 3 - Typical Junction Capacitance...
Description SCHOTTKY RECTIFIER

File Size 166.05K  /  6 Page

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    FRS240D FRS240H FRS240R FN3255

Intersil, Corp.
Intersil Corporation
Part No. FRS240D FRS240H FRS240R FN3255
OCR Text ...n 7/09/90 on TA17642 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec. 11-14, 1989 9. Neutron deriv...
Description 12A, 200V, 0.255 Ohm, Rad Hard, N-Channel Power MOSFETs 0.255 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
12A/ 200V/ 0.255 Ohm/ Rad Hard/ N-Channel Power MOSFETs
From old datasheet system

File Size 49.86K  /  6 Page

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    FRS244D FN3256 FRS244R FRS244H

Intersil, Corp.
Intersil Corporation
Part No. FRS244D FN3256 FRS244R FRS244H
OCR Text ...n 1/30/90 on TA17643 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron deriva...
Description 9A, 250V, 0.415 Ohm, Rad Hard, N-Channel Power MOSFETs 9 A, 250 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
9A, 250V, 0.415 Ohm, Rad Hard, N-Channel Power MOSFETs 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
From old datasheet system
9A/ 250V/ 0.415 Ohm/ Rad Hard/ N-Channel Power MOSFETs

File Size 49.92K  /  6 Page

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    IRF5210L IRF5210S

IRF[International Rectifier]
Part No. IRF5210L IRF5210S
OCR Text ... -VG S , Ga te -to-Source Volta ge (V) T J , J unc tion T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalize...Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Curren...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

File Size 182.97K  /  10 Page

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    FRK460D FRK460H FRK460R FN3238

INTERSIL[Intersil Corporation]
Part No. FRK460D FRK460H FRK460R FN3238
OCR Text ...11/14/90 on TA 17665 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron deriva...
Description 17A/ 500V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs
17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system

File Size 47.19K  /  6 Page

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For ge-avalanche Found Datasheets File :: 1565    Search Time::1.484ms    
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