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high power silicon controlled Datasheet PDF File

For high power silicon controlled Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1776 BF2040W
Description	silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
File Size	29.92K / 2 Page	View it Online	Download Datasheet

				Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BF2030 Q62702-F1773
Description	silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
File Size	15.31K / 2 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MCR718 MCR718T4 MCR716T4 MCR716
Description	silicon controlled Rectifier (Reverse Blocking Thyristors) Sensitive Gate silicon controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS) Sensitive Gate silicon controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 - 600 VOLTS)
File Size	68.12K / 6 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	BF1009 Q62702-F1613
Description	silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network From old datasheet system silicon N-Channel MOSFET Tetrode (For low noise high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
File Size	32.12K / 4 Page	View it Online	Download Datasheet

				Vishay Semiconductors
Part No.	IRKL250-06
Description	silicon controlled Rectifier, 555 A, 600 V, SCR, power, MAGN-A-PAK-5
File Size	486.57K / 14 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	M306N0FGTFP M306N0MCT
Description	60 W / 225 to 400 MHz controlled Q BROADBAND RF power TRANSISTOR NPN silicon 60 W, 225 to 400 MHz controlled Q BROADBAND RF power TRANSISTOR NPN silicon 60 W, 225 to 400 MHz controlled Q?BROADBAND RF power TRANSISTOR NPN silicon
File Size	134.51K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	2N6439
Description	60 W, 225 to 400 MHz controlled Q?BROADBAND RF power TRANSISTOR NPN silicon 60 W, 225 to 400 MHz controlled “Q” BROADBAND RF power TRANSISTOR NPN silicon
File Size	127.34K / 6 Page	View it Online	Download Datasheet

				Spectrum Control, Inc. Abracon, Corp. Cree, Inc. Vishay Intertechnology, Inc. LEDtronics, Inc. Electronic Theatre Controls, Inc. IRC Advanced Film Pascall Electronics, Ltd. ITT, Corp. TE Connectivity, Ltd. SPECTRUM CONTROL INC
Part No.	SO-512.00-300-1.33 SO-314.00-500-0.8 SO-154.80-600-0.8 SO-716.80-500-1.0 SO-717.30-500-1.0 SO-125.00-200-1.3 SO-515.00-400-0.06 SO-254.70-100-1.0 SO-833.7-400-0.6 SO-100.00-1000-0.55 SO-622.5-400-0.6 SO-300.00-300-1.3 SO-270-500-1.0 SO-724.80-250-1.0 SO-377.59-1000-0.6 SO-777-300-1.0 SO-143.00-400-1.3 SO-717.00-500-1.0 SO-930.0-300-1.00 SO-775.0-300-1.0 SO-445.8-200-1.0 SO-966-300-1.0 SO-645-400-0.6 SO-662.08-400-0.6 SO-320-100-1.5 SO-695-400-0.6 SO-860-300-1.2 SO-725.00-400-1.0 SO-1024.00-300-1.0 SO-600.30-300-1.0 SO-607.5-400-0.6 SO-500.00-400-1.0 SO-950.244-350-1.0
Description	VOLTAGE controlled SINE SAW OSCILLATOR, 511.7 MHz - 512.3 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 313.5 MHz - 314.5 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 154.2 MHz - 155.4 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 716.3 MHz - 717.3 MHz DFP-26 VOLTAGE controlled SINE SAW OSCILLATOR, 716.8 MHz - 717.8 MHz DFP-26 VOLTAGE controlled SINE SAW OSCILLATOR, 124.8 MHz - 125.2 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 514.6 MHz - 515.4 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 254.6 MHz - 254.8 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 833.3 MHz - 834.1 MHz DFP-26 VOLTAGE controlled SINE SAW OSCILLATOR, 99 MHz - 101 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 622.1 MHz - 622.9 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 299.7 MHz - 300.3 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 269.5 MHz - 270.5 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 724.55 MHz - 725.05 MHz DFP-26 VOLTAGE controlled SINE SAW OSCILLATOR, 376.59 MHz - 378.59 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 776.7 MHz - 777.3 MHz DFP-26 VOLTAGE controlled SINE SAW OSCILLATOR, 142.6 MHz - 143.4 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 716.5 MHz - 717.5 MHz DFP-26 VOLTAGE controlled SINE SAW OSCILLATOR, 929.7 MHz - 930.3 MHz DFP-26 VOLTAGE controlled SINE SAW OSCILLATOR, 774.7 MHz - 775.3 MHz DFP-26 VOLTAGE controlled SINE SAW OSCILLATOR, 445.6 MHz - 446 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 965.7 MHz - 966.3 MHz DFP-26 VOLTAGE controlled SINE SAW OSCILLATOR, 644.6 MHz - 645.4 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 661.68 MHz - 662.48 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 319.9 MHz - 320.1 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 694.6 MHz - 695.4 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 859.7 MHz - 860.3 MHz DFP-26 VOLTAGE controlled SINE SAW OSCILLATOR, 724.6 MHz - 725.4 MHz DFP-26 VOLTAGE controlled SINE SAW OSCILLATOR, 1023.7 MHz - 1024.3 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 600 MHz - 600.6 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 607.1 MHz - 607.9 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 499.6 MHz - 500.4 MHz VOLTAGE controlled SINE SAW OSCILLATOR, 949.894 MHz - 950.594 MHz
File Size	1,044.95K / 20 Page	View it Online	Download Datasheet

				General Electric Solid State GESS[GE Solid State] http://
Part No.	C106 C106S C106A C106B C106C C106D C106E C106F C106M C106N
Description	4A sensitive-gate silicon controlled rectifier. Vrrm 700V. 4-A Sensitive-Gate silicon controlled Rectifiers
File Size	32.97K / 1 Page	View it Online	Download Datasheet

				CREE power
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

For high power silicon controlled Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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