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  id-0.40a Datasheet PDF File

For id-0.40a Found Datasheets File :: 1417    Search Time::1.688ms    
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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDP8878
OCR Text ...ures rDS(ON) = 15m, VGS = 10V, ID = 40A rDS(ON) = 19m, VGS = 4.5V, ID = 36A High performance trench technology for extremely low rDS(ON) Lo...0 17.1 9.2 2.6 1.7 3.7 23 12 1235 250 175 pF pF pF nC nC nC nC nC Switching Characteristics (VGS...
Description N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m Ohm

File Size 190.25K  /  6 Page

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    2SK3364-01

FUJI[Fuji Electric]
Part No. 2SK3364-01
OCR Text ...ge temperature range Symbol VDS ID ID(puls) VGS EAV *1 PD Tch Tstg Rating 60 50 200 30 867 80 +150 -55 to +150 *1 L=0.463mH, Unit V A A V mJ W C C Vcc=24V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical charact...
Description N-CHANNEL SILICON POWER MOS-FET

File Size 116.78K  /  4 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDP8876
OCR Text ...res rDS(ON) = 8.5m, VGS = 10V, ID = 40A rDS(ON) = 10.3m, VGS = 4.5V, ID = 40A High performance trench technology for extremely low rDS(ON) ...0.5V, f = 1MHz VGS = 0V to 10V V = 15V DD VGS = 0V to 5V ID = 40A V = 0V to 1V Ig = 1.0mA GS - ...
Description N-Channel PowerTrench MOSFET

File Size 256.15K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDP8874_NL FDP8874 FDP8874NL
OCR Text ...es * rDS(ON) = 5.3m VGS = 10V, ID = 40A , * rDS(ON) = 6.6m VGS = 4.5V, ID = 40A , * High performance trench technology for extremely low rD...0.73 -55 to 175 A A A A mJ W W/oC oC Ratings 30 20 Units V V Thermal Characteristics RJC ...
Description 30V N-Channel PowerTrench MOSFET

File Size 201.44K  /  10 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDP038AN06A0_05 FDI038AN06A0 FDP038AN06A0 FDP038AN06A005
OCR Text ...S(ON) = 3.5m (Typ.), VGS = 10V, ID = 80A * Qg(tot) = 95nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Singl...0.48 62 o o C/W C/W This product has been designed to meet the extreme test conditions and en...
Description N-Channel PowerTrench? MOSFET 60V, 80A, 3.8m
N-Channel PowerTrench㈢ MOSFET 60V, 80A, 3.8mз

File Size 211.56K  /  10 Page

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    2SK2809 2SK2809-01MR

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2809 2SK2809-01MR
OCR Text ...e Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 50 200 20 453 50 150 -55 ~ +150 * L=0,241mH, VCC=24V > Equivalent Circuit Unit V A A V mJ* W C C - Electrical Characteristics (TC=25C), unless otherwise ...
Description Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1500uF; Voltage: 16V; Case Size: 10x20 mm; Packaging: Bulk
N-channel MOS-FET

File Size 344.27K  /  3 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDB8878
OCR Text ...ures rDS(ON) = 14m, VGS = 10V, ID = 40A rDS(ON) = 18m, VGS = 4.5V, ID = 36A High performance trench technology for extremely low rDS(ON) Lo...0.03mH,IAS = 38A Continuous (TC = 25oC, VGS = 10V) 48 42 170 60 21 47.3 -55 to 175 A A A mJ W o ...
Description N-Channel Logic Level PowerTrench? MOSFET 30V, 48A, 14mOhm
N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 48A, 14mOhm

File Size 215.84K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDB8876
OCR Text ...res rDS(ON) = 8.5m, VGS = 10V, ID = 40A rDS(ON) = 10.3m, VGS = 4.5V, ID = 40A High performance trench technology for extremely low rDS(ON) ...0.5V, f = 1MHz VGS = 0V to 10V V = 15V DD VGS = 0V to 5V ID = 40A V = 0V to 1V Ig = 1.0mA GS - ...
Description N-Channel PowerTrench? MOSFET 30V, 71A, 8.5mOhm
N-Channel PowerTrench㈢ MOSFET 30V, 71A, 8.5mOhm

File Size 252.27K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDB8874 FDB8874NL
OCR Text ...es * rDS(ON) = 4.7m VGS = 10V, ID = 40A , * rDS(ON) = 6.0m VGS = 4.5V, ID = 40A , * High performance trench technology for extremely low rD...0.73 -55 to 175 A A A A mJ W W/oC oC Ratings 30 20 Units V V Thermal Characteristics RJC ...
Description 30V N-Channel PowerTrench MOSFET

File Size 201.84K  /  11 Page

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    IRF[International Rectifier]
Part No. FC40SA50FK
OCR Text ...ute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuo...0.084 ID 40A SOT-227 Max. 40 26 160 430 3.45 30 9.0 -55 to + 150 Units A W W/C V V/...
Description    HEXFET Power MOSFET

File Size 119.41K  /  8 Page

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For id-0.40a Found Datasheets File :: 1417    Search Time::1.688ms    
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