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NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
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| Part No. |
BUK444-200 BUK444-200A BUK444-200B BUK444
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| OCR Text |
... 134) SYMBOL VDS VDGR VGS ID ID idm Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Juncti... |
| Description |
PowerMOS transistor 功率金属氧化物半导体晶体
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk
PowerMOS transistor
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| File Size |
76.65K /
7 Page |
 View
it Online |
Download Datasheet
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IXYS[IXYS Corporation]
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| Part No. |
DE475-501N DE475-501N44A
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| OCR Text |
...ed by TJM Tc = 25C Tc = 25C IS idm, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0
VDSS ID25
Maximum Ratings 500 500 20 30 48 288 44 30 V V V V A A A mJ
= = = =
500 V 48 A 0.11 1800W
Symbol VDSS VDGR VGS VGSM ID25 idm IA... |
| Description |
RF Power MOSFET
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| File Size |
169.37K /
4 Page |
View
it Online |
Download Datasheet |
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Philips
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| Part No. |
BUK110-50GL
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| OCR Text |
...CONDITIONS VIS = 0 V Tmb 25 C; idm = 25 A; VDD 25 V; inductive load Tmb 85 C; idm = 16 A; VDD 20 V; f = 250 Hz MIN. MAX. 45 1 80 UNIT A J mJ
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS... |
| Description |
PowerMOS transistor Logic level TOPFET
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| File Size |
80.54K /
11 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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