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igbt a Datasheet PDF File

For igbt a Found Datasheets File :: 11286 Search Time::3.203ms
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				ONSEMI[ON Semiconductor]
Part No.	MGP7N60ED MGP7N60ED_D ON1877 ON1876
OCR Text	...ulated Gate Bipolar Transistor (igbt) is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. Its new 600 V igbt technology is sp...
Description	Insulated Gate Bipolar Transistor withr anti-Parallel Diode igbt & DIODE IN TO-220 7.0 a @ 90 10 a @ 25 600 VOLTS From old datasheet system
File Size	140.16K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MGP7N60E
OCR Text	...ulated Gate Bipolar Transistor (igbt) uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capabili...a high temperature short circuit capability and a low VCE(on). It also provides fast switching chara...
Description	Insulated Gate Bipolar Transistor
File Size	118.28K / 6 Page	View it Online	Download Datasheet

				MICREL INC MICREL[Micrel Semiconductor] Micrel Semiconductor, Inc.
Part No.	MIC4421 MIC4421BM MIC4421BN MIC4421CM MIC4421CN MIC4421CT MIC4422BM MIC4422BN MIC4422CM MIC4422CN MIC4422CT
OCR Text	... Line Drivers Driving MOSFET or igbt Parallel Chip Modules Local Power ON/OFF Switch Pulse Generators Functional Diagram VS 0.3ma 0...a -5 0 V VIN VS See Figure 1 See Figure 1 IOUT = 10 ma, VS = 18 V IOUT = 10 ma, VS = 18 V VS = ...
Description	9a-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process 9 a BUF OR INV BaSED MOSFET DRIVER, PDSO8 FPGa - 100000 SYSTEM GaTE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 9 a BUF OR INV BaSED MOSFET DRIVER, PDIP8 FPGa - 100000 SYSTEM GaTE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN 9 a BUF OR INV BaSED MOSFET DRIVER, PSFM5 9a-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process 9 a BUF OR INV BaSED MOSFET DRIVER, PDIP8
File Size	109.03K / 10 Page	View it Online	Download Datasheet

				Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
Part No.	aN4839 aN4869 aN4505 aN4506
OCR Text	...Title Heatsink requirements for igbt modules Calculating the junction temperature of power semiconductors Guidance notes for formulating tec...a support service for those customers requiring more than the basic semiconductor, and has developed...
Description	Circular Connector; No. of Contacts:23; Series:MS27656; Body Material:aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No LJT 55C 55#22D PIN RECP Power assemblies
File Size	115.58K / 5 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	aPT50GF120B2R aPT50GF120LR
OCR Text	igbt The Fast igbt is a new generation of high voltage power igbts. Using Non-Punch Through Technology the Fast igbt offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. T-MaxTM (B2R) * Low Forward V...
Description	The Fast igbt is a new generation of high voltage power igbts. 该快速igbt是一种高压igbt的新一代 Fast igbt 1200V 80a
File Size	37.28K / 3 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	aPT50GF120JRD
OCR Text	igbt & FRED The Fast igbtTM is a new generation of high voltage power igbts. Using NonPunch Through Technology the Fast igbtTM combined with an aPT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast ...
Description	Fast igbt & FRED 1200V 75a The Fast igbt is a new generation of high voltage power igbts. The Fast igbt⑩ is a new generation of high voltage power igbts.
File Size	51.80K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	aPT50GF60B2RD aPT50GF60LRD
OCR Text	igbt & FRED The Fast igbtTM is a new generation of high voltage power igbts. Using NonPunch Through Technology the Fast igbtTM combined with an aPT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast ...
Description	Fast igbt & FRED 600V 80a The Fast igbt⑩ is a new generation of high voltage power igbts. The Fast igbt is a new generation of high voltage power igbts. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速igbt是一种高压igbt的新一代
File Size	112.47K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	aPT50GF60BR
OCR Text	igbt The Fast igbt is a new generation of high voltage power igbts. Using Non-Punch Through Technology the Fast igbt offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-247 C * Low Forward Volta...
Description	Fast igbt 600V 75a The Fast igbt is a new generation of high voltage power igbts.
File Size	80.83K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	aPT50GF60HR
OCR Text	igbt The Fast igbt is a new generation of high voltage power igbts. Using Non-Punch Through Technology the Fast igbt offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-258 * Low Forward Voltage ...
Description	Fast igbt 600V 55a The Fast igbt is a new generation of high voltage power igbts.
File Size	25.29K / 2 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... Siemens Semiconductor Group
Part No.	BUP401
OCR Text	igbt Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * avalanche rated Pin 1 G Type BU...a 29 18 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 56 34 TC = 25 C TC...
Description	From old datasheet system igbt (Low forward voltage drop High switching speed Low tail current Latch-up free avalanche rated)
File Size	148.84K / 8 Page	View it Online	Download Datasheet

For igbt a Found Datasheets File :: 11286 Search Time::3.203ms
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